Wafer supporting assembly and wafer holding element for vapor deposition equipment
A wafer supporting assembly for vapor deposition equipment is used for supporting wafers, and includes a susceptor, a gas supply line and a central groove. The susceptor includes an upper surface, the gas supply line is located in the susceptor and extends in a horizontal direction. The gas supply l...
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| creator | TSENG, SHIHANG CHEN, CHENUNG WEI, LINGUN HE, CHEN-YU YANG, JYUN-SYONG LEE, CHI-LING LO, WEN-HSIEN |
| description | A wafer supporting assembly for vapor deposition equipment is used for supporting wafers, and includes a susceptor, a gas supply line and a central groove. The susceptor includes an upper surface, the gas supply line is located in the susceptor and extends in a horizontal direction. The gas supply line has a height h', and a distance from the bottom surface of the gas supply line to the upper surface of the susceptor is H. The central groove is recessed inwardly from the upper surface of the susceptor and has a depth h. The sum of the height h' of the gas supply line and the depth h of the central groove is less than or equal to 45% of the distance H, and greater than or equal to 25% of the distance H. |
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CHEN, CHENUNG ; WEI, LINGUN ; HE, CHEN-YU ; YANG, JYUN-SYONG ; LEE, CHI-LING ; LO, WEN-HSIEN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TW202411463A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2024</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>CRYSTAL GROWTH</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>TSENG, SHIHANG</creatorcontrib><creatorcontrib>CHEN, CHENUNG</creatorcontrib><creatorcontrib>WEI, LINGUN</creatorcontrib><creatorcontrib>HE, CHEN-YU</creatorcontrib><creatorcontrib>YANG, JYUN-SYONG</creatorcontrib><creatorcontrib>LEE, CHI-LING</creatorcontrib><creatorcontrib>LO, WEN-HSIEN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TSENG, SHIHANG</au><au>CHEN, CHENUNG</au><au>WEI, LINGUN</au><au>HE, CHEN-YU</au><au>YANG, JYUN-SYONG</au><au>LEE, CHI-LING</au><au>LO, WEN-HSIEN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Wafer supporting assembly and wafer holding element for vapor deposition equipment</title><date>2024-03-16</date><risdate>2024</risdate><abstract>A wafer supporting assembly for vapor deposition equipment is used for supporting wafers, and includes a susceptor, a gas supply line and a central groove. The susceptor includes an upper surface, the gas supply line is located in the susceptor and extends in a horizontal direction. The gas supply line has a height h', and a distance from the bottom surface of the gas supply line to the upper surface of the susceptor is H. The central groove is recessed inwardly from the upper surface of the susceptor and has a depth h. The sum of the height h' of the gas supply line and the depth h of the central groove is less than or equal to 45% of the distance H, and greater than or equal to 25% of the distance H.</abstract><oa>free_for_read</oa></addata></record> |
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| language | chi ; eng |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | Wafer supporting assembly and wafer holding element for vapor deposition equipment |
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