Gas supply line arrangements for inhibiting particle contamination in substrate processing
In some examples, a gas supply line arrangement is provided for inhibiting particle contamination in a substrate process chamber. An example gas supply line arrangement comprises a cleaning gas source for a clean cycle of the substrate process chamber, a purge gas source for a purge cycle of the sub...
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| creator | VELLANKI, RAVI RUMER, MICHAEL DHAWADE, EASHAN RAJU |
| description | In some examples, a gas supply line arrangement is provided for inhibiting particle contamination in a substrate process chamber. An example gas supply line arrangement comprises a cleaning gas source for a clean cycle of the substrate process chamber, a purge gas source for a purge cycle of the substrate process chamber, and a gas supply line to carry cleaning gas and purge gas towards the substrate process chamber. A three-port valve in the gas supply line arrangement comprises a valve inlet connected to the gas supply line, a first valve outlet in fluid communication with the substrate process chamber, the first valve outlet operable to admit or prevent a passage of cleaning gas to the substrate process chamber, and a second valve outlet connected to a divert line and operable to admit or prevent a passage of particle-containing purge gas to the divert line. |
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An example gas supply line arrangement comprises a cleaning gas source for a clean cycle of the substrate process chamber, a purge gas source for a purge cycle of the substrate process chamber, and a gas supply line to carry cleaning gas and purge gas towards the substrate process chamber. A three-port valve in the gas supply line arrangement comprises a valve inlet connected to the gas supply line, a first valve outlet in fluid communication with the substrate process chamber, the first valve outlet operable to admit or prevent a passage of cleaning gas to the substrate process chamber, and a second valve outlet connected to a divert line and operable to admit or prevent a passage of particle-containing purge gas to the divert line.</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240301&DB=EPODOC&CC=TW&NR=202409338A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240301&DB=EPODOC&CC=TW&NR=202409338A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>VELLANKI, RAVI</creatorcontrib><creatorcontrib>RUMER, MICHAEL</creatorcontrib><creatorcontrib>DHAWADE, EASHAN RAJU</creatorcontrib><title>Gas supply line arrangements for inhibiting particle contamination in substrate processing</title><description>In some examples, a gas supply line arrangement is provided for inhibiting particle contamination in a substrate process chamber. 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A three-port valve in the gas supply line arrangement comprises a valve inlet connected to the gas supply line, a first valve outlet in fluid communication with the substrate process chamber, the first valve outlet operable to admit or prevent a passage of cleaning gas to the substrate process chamber, and a second valve outlet connected to a divert line and operable to admit or prevent a passage of particle-containing purge gas to the divert line.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2024</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNzD0KAjEQQOE0FqLeYTyAsGwstBTx5wALgs0yG2bXgewkZMbC25vCA1i95uMt3fOGCvrOOX4gshBgKSgTzSSmMKYCLC8e2FgmyFiMQyQISQxnFjROUkU9DGoFjSCXFEi18rVbjBiVNr-u3PZ66c73HeXUk2YMJGR992ibdt8cvT-c_D_mC6l3PE8</recordid><startdate>20240301</startdate><enddate>20240301</enddate><creator>VELLANKI, RAVI</creator><creator>RUMER, MICHAEL</creator><creator>DHAWADE, EASHAN RAJU</creator><scope>EVB</scope></search><sort><creationdate>20240301</creationdate><title>Gas supply line arrangements for inhibiting particle contamination in substrate processing</title><author>VELLANKI, RAVI ; RUMER, MICHAEL ; DHAWADE, EASHAN RAJU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TW202409338A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2024</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>VELLANKI, RAVI</creatorcontrib><creatorcontrib>RUMER, MICHAEL</creatorcontrib><creatorcontrib>DHAWADE, EASHAN RAJU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>VELLANKI, RAVI</au><au>RUMER, MICHAEL</au><au>DHAWADE, EASHAN RAJU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Gas supply line arrangements for inhibiting particle contamination in substrate processing</title><date>2024-03-01</date><risdate>2024</risdate><abstract>In some examples, a gas supply line arrangement is provided for inhibiting particle contamination in a substrate process chamber. 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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | Gas supply line arrangements for inhibiting particle contamination in substrate processing |
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