Systems and methods for producing epitaxial wafers

Systems and methods for producing epitaxial wafers

A method of producing an epitaxial semiconductor wafer includes measuring one or more epitaxial semiconductor wafers to determine an epitaxial deposition layer profile produced by an epitaxy apparatus. The method also includes polishing a semiconductor wafer using a polishing assembly and measuring...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: HSU, CHIH-YUAN, TU, CHUNIN, CHEN, SHIHIANG, YANG, YAUING
Format: Patent
Sprache:chi ; eng
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CRYSTAL GROWTH
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SEMICONDUCTOR DEVICES
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A method of producing an epitaxial semiconductor wafer includes measuring one or more epitaxial semiconductor wafers to determine an epitaxial deposition layer profile produced by an epitaxy apparatus. The method also includes polishing a semiconductor wafer using a polishing assembly and measuring the polished semiconductor wafer to determine a surface profile of the polished wafer. The method further includes generating a predicted post-epitaxy surface profile of the polished wafer by comparing the surface profile of the polished wafer and the determined epitaxial deposition layer profile produced by the epitaxy apparatus. The method also includes determining a predicted post-epitaxy parameter based on the predicted post-epitaxy surface profile and adjusting, based on the predicted post-epitaxy parameter, a process condition of the polishing assembly.