Laminate structure and thin film transistor

A laminate structure comprising a crystal oxide semiconductor film that has In as a main component, and an insulation film that is laminated to form an interface with the crystal oxide semiconductor, wherein the laminate structure has a region that satisfies formula (1) in the insulation film at a f...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	IWASE, NOBUHIRO, MIWA, HIROYUKI, TSURUMA, YUKI, KAWASHIMA, EMI, YAMAGUCHI, KOJI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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