Fast atomic layer etch

Fast atomic layer etch

A method for etching an etch layer is provided. The method comprises a plurality of cycles, wherein each cycle, comprises exposing the etch layer to neutral radicals for a time between 10 ms and 600 ms, wherein the neutral radicals are absorbed into the etch layer to form a modified part of the etch...

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Bibliographische Detailangaben
Hauptverfasser: THOMAS, CLINT EDWARD, YANG, WENBING, BENNET, ALEXANDER DECLAN, TAN, SAMANTHA SIAMHWA, PATRICK, ROGER, LEE, YOUNG AH, LI, BAICHANG, WITKOWICKI, DEREK, PAN, YANG, FAN, YIWEN, BALAN, ARUNIMA DEYA, VAN CLEEMPUT, PATRICK AUGUST
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method for etching an etch layer is provided. The method comprises a plurality of cycles, wherein each cycle, comprises exposing the etch layer to neutral radicals for a time between 10 ms and 600 ms, wherein the neutral radicals are absorbed into the etch layer to form a modified part of the etch layer and exposing the etch layer to bombardment ions for a time between 10 ms and 600 ms, wherein the bombardment ions remove the modified part of the etch layer.