Graphene-clad metal interconnect and method of forming the same

A graphene-clad metal interconnect extends material properties of graphene to both damascene and patterned interconnect structures at lower metal layers, leading to significant reductions in resistance. Graphene cladding can be used with or without a metal barrier/liner. Presence of a barrier/liner...

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Hauptverfasser: LU, YIN-LUNG, CHANG, CHUN-WEI, HE, JUN, TENG, AN-SHUN, LIN, JIAN-HONG
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creator LU, YIN-LUNG
CHANG, CHUN-WEI
HE, JUN
TENG, AN-SHUN
LIN, JIAN-HONG
description A graphene-clad metal interconnect extends material properties of graphene to both damascene and patterned interconnect structures at lower metal layers, leading to significant reductions in resistance. Graphene cladding can be used with or without a metal barrier/liner. Presence of a barrier/liner can serve to catalyze growth of an overlying graphene layer. Graphene may also be selectively grown on barrier surfaces. Fully integrated structures and process flows for integrated circuits with graphene-clad metallization are described.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_TW202349717A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>TW202349717A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_TW202349717A3</originalsourceid><addsrcrecordid>eNrjZLB3L0osyEjNS9VNzklMUchNLUnMUcjMK0ktSs7Py0tNLlFIzAMLZ-SnKOSnKaTlF-Vm5qUrlGSkKhQn5qbyMLCmJeYUp_JCaW4GRTfXEGcP3dSC_PjU4oLEZKDZJfEh4UYGRsYmluaG5o7GxKgBAHPwMMw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Graphene-clad metal interconnect and method of forming the same</title><source>esp@cenet</source><creator>LU, YIN-LUNG ; CHANG, CHUN-WEI ; HE, JUN ; TENG, AN-SHUN ; LIN, JIAN-HONG</creator><creatorcontrib>LU, YIN-LUNG ; CHANG, CHUN-WEI ; HE, JUN ; TENG, AN-SHUN ; LIN, JIAN-HONG</creatorcontrib><description>A graphene-clad metal interconnect extends material properties of graphene to both damascene and patterned interconnect structures at lower metal layers, leading to significant reductions in resistance. Graphene cladding can be used with or without a metal barrier/liner. Presence of a barrier/liner can serve to catalyze growth of an overlying graphene layer. Graphene may also be selectively grown on barrier surfaces. Fully integrated structures and process flows for integrated circuits with graphene-clad metallization are described.</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20231216&amp;DB=EPODOC&amp;CC=TW&amp;NR=202349717A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20231216&amp;DB=EPODOC&amp;CC=TW&amp;NR=202349717A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LU, YIN-LUNG</creatorcontrib><creatorcontrib>CHANG, CHUN-WEI</creatorcontrib><creatorcontrib>HE, JUN</creatorcontrib><creatorcontrib>TENG, AN-SHUN</creatorcontrib><creatorcontrib>LIN, JIAN-HONG</creatorcontrib><title>Graphene-clad metal interconnect and method of forming the same</title><description>A graphene-clad metal interconnect extends material properties of graphene to both damascene and patterned interconnect structures at lower metal layers, leading to significant reductions in resistance. Graphene cladding can be used with or without a metal barrier/liner. Presence of a barrier/liner can serve to catalyze growth of an overlying graphene layer. Graphene may also be selectively grown on barrier surfaces. Fully integrated structures and process flows for integrated circuits with graphene-clad metallization are described.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLB3L0osyEjNS9VNzklMUchNLUnMUcjMK0ktSs7Py0tNLlFIzAMLZ-SnKOSnKaTlF-Vm5qUrlGSkKhQn5qbyMLCmJeYUp_JCaW4GRTfXEGcP3dSC_PjU4oLEZKDZJfEh4UYGRsYmluaG5o7GxKgBAHPwMMw</recordid><startdate>20231216</startdate><enddate>20231216</enddate><creator>LU, YIN-LUNG</creator><creator>CHANG, CHUN-WEI</creator><creator>HE, JUN</creator><creator>TENG, AN-SHUN</creator><creator>LIN, JIAN-HONG</creator><scope>EVB</scope></search><sort><creationdate>20231216</creationdate><title>Graphene-clad metal interconnect and method of forming the same</title><author>LU, YIN-LUNG ; CHANG, CHUN-WEI ; HE, JUN ; TENG, AN-SHUN ; LIN, JIAN-HONG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TW202349717A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>LU, YIN-LUNG</creatorcontrib><creatorcontrib>CHANG, CHUN-WEI</creatorcontrib><creatorcontrib>HE, JUN</creatorcontrib><creatorcontrib>TENG, AN-SHUN</creatorcontrib><creatorcontrib>LIN, JIAN-HONG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LU, YIN-LUNG</au><au>CHANG, CHUN-WEI</au><au>HE, JUN</au><au>TENG, AN-SHUN</au><au>LIN, JIAN-HONG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Graphene-clad metal interconnect and method of forming the same</title><date>2023-12-16</date><risdate>2023</risdate><abstract>A graphene-clad metal interconnect extends material properties of graphene to both damascene and patterned interconnect structures at lower metal layers, leading to significant reductions in resistance. Graphene cladding can be used with or without a metal barrier/liner. Presence of a barrier/liner can serve to catalyze growth of an overlying graphene layer. Graphene may also be selectively grown on barrier surfaces. Fully integrated structures and process flows for integrated circuits with graphene-clad metallization are described.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Graphene-clad metal interconnect and method of forming the same
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-09T17%3A48%3A09IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=LU,%20YIN-LUNG&rft.date=2023-12-16&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ETW202349717A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true