Semiconductor device structure and forming method thereof

Methods for forming a back-end-of-line (BEOL) passive device structure are provided. A method according to the present disclosure includes depositing a first conductor layer over a substrate, patterning the first conductor layer to form a patterned first conductor layer, depositing a first insulation layer over the patterned first conductor layer, depositing a second conductor layer over the first insulation layer, patterning the second conductor layer to form a patterned second conductor layer, depositing a second insulation layer over the patterned second conductor layer, depositing a third conductor layer over the second insulation layer, and patterning the third conductor layer to form a patterned third conductor layer. The patterning of the first conductor layer includes removing a right-angle edge of the first conductor layer.