Acoustic wave device and fabrication method thereof
An acoustic device includes a piezoelectric substrate and a transducer. The piezoelectric substrate has a surface. The transducer is disposed on the surface of the piezoelectric substrate. The transducer includes a first electrode, a second electrode and a dielectric block. The first electrode exten...
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creator | LIN, SHIH-MENG CHEN, SHIH |
description | An acoustic device includes a piezoelectric substrate and a transducer. The piezoelectric substrate has a surface. The transducer is disposed on the surface of the piezoelectric substrate. The transducer includes a first electrode, a second electrode and a dielectric block. The first electrode extends along a first direction, and has a first end. The second electrode extends along the first direction, and has a second end. The first electrode and the second electrode are spaced apart from each other along a second direction. The dielectric block is disposed at the first end of the first electrode and is located on the surface of the piezoelectric substrate. The surface of the piezoelectric substrate includes a first electrode region in contact with the first electrode, and a dielectric block region in contact with the dielectric block, and a pressure across the dielectric block region is no less than a pressure across the first electrode region. |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_TW202345423A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>TW202345423A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_TW202345423A3</originalsourceid><addsrcrecordid>eNrjZDB2TM4vLS7JTFYoTyxLVUhJLctMTlVIzEtRSEtMKspMTizJzM9TyE0tychPUSjJSC1KzU_jYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxIeFGBkbGJqYmRsaOxsSoAQD3-yyB</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Acoustic wave device and fabrication method thereof</title><source>esp@cenet</source><creator>LIN, SHIH-MENG ; CHEN, SHIH</creator><creatorcontrib>LIN, SHIH-MENG ; CHEN, SHIH</creatorcontrib><description>An acoustic device includes a piezoelectric substrate and a transducer. The piezoelectric substrate has a surface. The transducer is disposed on the surface of the piezoelectric substrate. The transducer includes a first electrode, a second electrode and a dielectric block. The first electrode extends along a first direction, and has a first end. The second electrode extends along the first direction, and has a second end. The first electrode and the second electrode are spaced apart from each other along a second direction. The dielectric block is disposed at the first end of the first electrode and is located on the surface of the piezoelectric substrate. The surface of the piezoelectric substrate includes a first electrode region in contact with the first electrode, and a dielectric block region in contact with the dielectric block, and a pressure across the dielectric block region is no less than a pressure across the first electrode region.</description><language>chi ; eng</language><subject>BASIC ELECTRONIC CIRCUITRY ; ELECTRICITY ; IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS ; RESONATORS</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231116&DB=EPODOC&CC=TW&NR=202345423A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231116&DB=EPODOC&CC=TW&NR=202345423A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LIN, SHIH-MENG</creatorcontrib><creatorcontrib>CHEN, SHIH</creatorcontrib><title>Acoustic wave device and fabrication method thereof</title><description>An acoustic device includes a piezoelectric substrate and a transducer. The piezoelectric substrate has a surface. The transducer is disposed on the surface of the piezoelectric substrate. The transducer includes a first electrode, a second electrode and a dielectric block. The first electrode extends along a first direction, and has a first end. The second electrode extends along the first direction, and has a second end. The first electrode and the second electrode are spaced apart from each other along a second direction. The dielectric block is disposed at the first end of the first electrode and is located on the surface of the piezoelectric substrate. The surface of the piezoelectric substrate includes a first electrode region in contact with the first electrode, and a dielectric block region in contact with the dielectric block, and a pressure across the dielectric block region is no less than a pressure across the first electrode region.</description><subject>BASIC ELECTRONIC CIRCUITRY</subject><subject>ELECTRICITY</subject><subject>IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS</subject><subject>RESONATORS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDB2TM4vLS7JTFYoTyxLVUhJLctMTlVIzEtRSEtMKspMTizJzM9TyE0tychPUSjJSC1KzU_jYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxIeFGBkbGJqYmRsaOxsSoAQD3-yyB</recordid><startdate>20231116</startdate><enddate>20231116</enddate><creator>LIN, SHIH-MENG</creator><creator>CHEN, SHIH</creator><scope>EVB</scope></search><sort><creationdate>20231116</creationdate><title>Acoustic wave device and fabrication method thereof</title><author>LIN, SHIH-MENG ; CHEN, SHIH</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TW202345423A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2023</creationdate><topic>BASIC ELECTRONIC CIRCUITRY</topic><topic>ELECTRICITY</topic><topic>IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS</topic><topic>RESONATORS</topic><toplevel>online_resources</toplevel><creatorcontrib>LIN, SHIH-MENG</creatorcontrib><creatorcontrib>CHEN, SHIH</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LIN, SHIH-MENG</au><au>CHEN, SHIH</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Acoustic wave device and fabrication method thereof</title><date>2023-11-16</date><risdate>2023</risdate><abstract>An acoustic device includes a piezoelectric substrate and a transducer. The piezoelectric substrate has a surface. The transducer is disposed on the surface of the piezoelectric substrate. The transducer includes a first electrode, a second electrode and a dielectric block. The first electrode extends along a first direction, and has a first end. The second electrode extends along the first direction, and has a second end. The first electrode and the second electrode are spaced apart from each other along a second direction. The dielectric block is disposed at the first end of the first electrode and is located on the surface of the piezoelectric substrate. The surface of the piezoelectric substrate includes a first electrode region in contact with the first electrode, and a dielectric block region in contact with the dielectric block, and a pressure across the dielectric block region is no less than a pressure across the first electrode region.</abstract><oa>free_for_read</oa></addata></record> |
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language | chi ; eng |
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subjects | BASIC ELECTRONIC CIRCUITRY ELECTRICITY IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS RESONATORS |
title | Acoustic wave device and fabrication method thereof |
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