Semiconductor structures and methods of formation

Various back end of line (BEOL) layer formation techniques described herein enable reduced contact resistance, reduced surface roughness, and/or increased semiconductor device performance for BEOL layers such as interconnects and/or metallization layers.

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Hauptverfasser: KUO, CHIA-PANG, LIU, YAO-MIN, LEE, YA-LIEN, CHEN, KUANIA, CHIN, SHUNG, PENG, HSIN-YING, HUANG, JAU-JIUN, CHI, CHIHIEN
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creator KUO, CHIA-PANG
LIU, YAO-MIN
LEE, YA-LIEN
CHEN, KUANIA
CHIN, SHUNG
PENG, HSIN-YING
HUANG, JAU-JIUN
CHI, CHIHIEN
description Various back end of line (BEOL) layer formation techniques described herein enable reduced contact resistance, reduced surface roughness, and/or increased semiconductor device performance for BEOL layers such as interconnects and/or metallization layers.
format Patent
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Semiconductor structures and methods of formation
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