Transistor device and method of forming the same
Transistor devices are provided. A transistor device includes a substrate. The transistor device includes a lower transistor having a lower gate and a lower channel region on the substrate. The transistor device includes an upper transistor having an upper gate and an upper channel region. The lower...
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Hauptverfasser: | , , , , , , , , , , , |
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Format: | Patent |
Sprache: | chi ; eng |
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