Transistor device and method of forming the same

Transistor devices are provided. A transistor device includes a substrate. The transistor device includes a lower transistor having a lower gate and a lower channel region on the substrate. The transistor device includes an upper transistor having an upper gate and an upper channel region. The lower...

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Bibliographische Detailangaben
Hauptverfasser: YUN, SEUNGAN, PARK, REBECCA, HA, DAE-WON, SAREMI, MEHDI, HONG, BYOUNG-HAK, PARK, JAE-HYUN, YIM, JEONG-HYUK, SEO, KANG-ILL, HWANG, INAN, JO, GUN-HO, HE, MING, SIMKA, HARSONO
Format: Patent
Sprache:chi ; eng
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