Fabrication method of semiconductor substrate and micro-electro-mechanical system (MEMS) device

A method of fabricating a semiconductor substrate includes the following steps. A first wafer is provided and a first surface of the first wafer is etched to form a plurality of cavities. A second wafer is formed on the first surface, where forming the second wafer includes the following steps: prov...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: CHAND, RAKESH, SHUNMUGAM, MUNIANDY, YELEHANKA, RAMACHANDRAMURTHY PRADEEP
Format: Patent
Sprache:chi ; eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator CHAND, RAKESH
SHUNMUGAM, MUNIANDY
YELEHANKA, RAMACHANDRAMURTHY PRADEEP
description A method of fabricating a semiconductor substrate includes the following steps. A first wafer is provided and a first surface of the first wafer is etched to form a plurality of cavities. A second wafer is formed on the first surface, where forming the second wafer includes the following steps: providing a core substrate; forming a first insulating layer on the core substrate; and depositing a polysilicon layer on the first insulating layer and the core substrate. In addition, the polysilicon layer is bonded with the first wafer to cover the cavities, where the polysilicon layer is disposed between the first insulating layer and the first wafer. In addition, a MEMS device using the semiconductor substrate is also provided.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_TW202331820A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>TW202331820A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_TW202331820A3</originalsourceid><addsrcrecordid>eNqNjDEKwkAQANNYiPqHtdMiEJPGViTBJpUBy3DZ25CDu9twuxH8vSl8gNUUM8w26xszJIdGHUcIpBNb4BGEgkOOdkHlBLIMoskogYkWVpM4J0-oKwPhZOJ68CAfUQpwauv2eQZLb4e0zzaj8UKHH3fZsam7-yOnmXuS2SBF0r57lUVZVZdrWdyqf5ovhrQ8yg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Fabrication method of semiconductor substrate and micro-electro-mechanical system (MEMS) device</title><source>esp@cenet</source><creator>CHAND, RAKESH ; SHUNMUGAM, MUNIANDY ; YELEHANKA, RAMACHANDRAMURTHY PRADEEP</creator><creatorcontrib>CHAND, RAKESH ; SHUNMUGAM, MUNIANDY ; YELEHANKA, RAMACHANDRAMURTHY PRADEEP</creatorcontrib><description>A method of fabricating a semiconductor substrate includes the following steps. A first wafer is provided and a first surface of the first wafer is etched to form a plurality of cavities. A second wafer is formed on the first surface, where forming the second wafer includes the following steps: providing a core substrate; forming a first insulating layer on the core substrate; and depositing a polysilicon layer on the first insulating layer and the core substrate. In addition, the polysilicon layer is bonded with the first wafer to cover the cavities, where the polysilicon layer is disposed between the first insulating layer and the first wafer. In addition, a MEMS device using the semiconductor substrate is also provided.</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES ; MICROSTRUCTURAL TECHNOLOGY ; PERFORMING OPERATIONS ; PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS ; SEMICONDUCTOR DEVICES ; TRANSPORTING</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20230801&amp;DB=EPODOC&amp;CC=TW&amp;NR=202331820A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20230801&amp;DB=EPODOC&amp;CC=TW&amp;NR=202331820A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CHAND, RAKESH</creatorcontrib><creatorcontrib>SHUNMUGAM, MUNIANDY</creatorcontrib><creatorcontrib>YELEHANKA, RAMACHANDRAMURTHY PRADEEP</creatorcontrib><title>Fabrication method of semiconductor substrate and micro-electro-mechanical system (MEMS) device</title><description>A method of fabricating a semiconductor substrate includes the following steps. A first wafer is provided and a first surface of the first wafer is etched to form a plurality of cavities. A second wafer is formed on the first surface, where forming the second wafer includes the following steps: providing a core substrate; forming a first insulating layer on the core substrate; and depositing a polysilicon layer on the first insulating layer and the core substrate. In addition, the polysilicon layer is bonded with the first wafer to cover the cavities, where the polysilicon layer is disposed between the first insulating layer and the first wafer. In addition, a MEMS device using the semiconductor substrate is also provided.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES</subject><subject>MICROSTRUCTURAL TECHNOLOGY</subject><subject>PERFORMING OPERATIONS</subject><subject>PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjDEKwkAQANNYiPqHtdMiEJPGViTBJpUBy3DZ25CDu9twuxH8vSl8gNUUM8w26xszJIdGHUcIpBNb4BGEgkOOdkHlBLIMoskogYkWVpM4J0-oKwPhZOJ68CAfUQpwauv2eQZLb4e0zzaj8UKHH3fZsam7-yOnmXuS2SBF0r57lUVZVZdrWdyqf5ovhrQ8yg</recordid><startdate>20230801</startdate><enddate>20230801</enddate><creator>CHAND, RAKESH</creator><creator>SHUNMUGAM, MUNIANDY</creator><creator>YELEHANKA, RAMACHANDRAMURTHY PRADEEP</creator><scope>EVB</scope></search><sort><creationdate>20230801</creationdate><title>Fabrication method of semiconductor substrate and micro-electro-mechanical system (MEMS) device</title><author>CHAND, RAKESH ; SHUNMUGAM, MUNIANDY ; YELEHANKA, RAMACHANDRAMURTHY PRADEEP</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TW202331820A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES</topic><topic>MICROSTRUCTURAL TECHNOLOGY</topic><topic>PERFORMING OPERATIONS</topic><topic>PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>CHAND, RAKESH</creatorcontrib><creatorcontrib>SHUNMUGAM, MUNIANDY</creatorcontrib><creatorcontrib>YELEHANKA, RAMACHANDRAMURTHY PRADEEP</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>CHAND, RAKESH</au><au>SHUNMUGAM, MUNIANDY</au><au>YELEHANKA, RAMACHANDRAMURTHY PRADEEP</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Fabrication method of semiconductor substrate and micro-electro-mechanical system (MEMS) device</title><date>2023-08-01</date><risdate>2023</risdate><abstract>A method of fabricating a semiconductor substrate includes the following steps. A first wafer is provided and a first surface of the first wafer is etched to form a plurality of cavities. A second wafer is formed on the first surface, where forming the second wafer includes the following steps: providing a core substrate; forming a first insulating layer on the core substrate; and depositing a polysilicon layer on the first insulating layer and the core substrate. In addition, the polysilicon layer is bonded with the first wafer to cover the cavities, where the polysilicon layer is disposed between the first insulating layer and the first wafer. In addition, a MEMS device using the semiconductor substrate is also provided.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language chi ; eng
recordid cdi_epo_espacenet_TW202331820A
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES
MICROSTRUCTURAL TECHNOLOGY
PERFORMING OPERATIONS
PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
SEMICONDUCTOR DEVICES
TRANSPORTING
title Fabrication method of semiconductor substrate and micro-electro-mechanical system (MEMS) device
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-15T09%3A05%3A09IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=CHAND,%20RAKESH&rft.date=2023-08-01&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ETW202331820A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true