Semiconductor structure

A barrier layer is selectively formed on a bottom surface of a recess (e.g., in which a back end of line (BEOL) conductive structure will be formed) using a combination of flash physical vapor deposition with atomic layer deposition. Additionally, a ruthenium liner is selectively deposited on sidewa...

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Hauptverfasser:	LIN, CHI-FENG, CHIN, SHUNG, CHI, CHIHIEN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	LIN, CHI-FENG CHIN, SHUNG CHI, CHIHIEN
description	A barrier layer is selectively formed on a bottom surface of a recess (e.g., in which a back end of line (BEOL) conductive structure will be formed) using a combination of flash physical vapor deposition with atomic layer deposition. Additionally, a ruthenium liner is selectively deposited on sidewalls of the BEOL conductive structure using a blocking material. Accordingly, the barrier layer prevents diffusion of metal ions from the BEOL conductive structure and is thinner at the bottom surface as compared to the sidewalls in order to reduce contact resistance. Additionally, the ruthenium liner improves copper flow into the BEOL conductive structure and is thinner at the bottom surface in order to further reduce contact resistance.
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subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	Semiconductor structure
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