Semiconductor structure
A graphene liner deposited between at least one liner material (e.g., barrier layer, ruthenium liner, and/or cobalt liner) and a copper conductive structure reduces surface scattering at an interface between the at least one liner material and the copper conductive structure. Additionally, or altern...
Gespeichert in:
| Hauptverfasser: | , , , |
|---|---|
| Format: | Patent |
| Sprache: | chi ; eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | TSAI, MING-HSING CHANG, CHIH-YI CHIN, SHUNG CHI, CHIHIEN |
| description | A graphene liner deposited between at least one liner material (e.g., barrier layer, ruthenium liner, and/or cobalt liner) and a copper conductive structure reduces surface scattering at an interface between the at least one liner material and the copper conductive structure. Additionally, or alternatively, the carbon-based liner reduces contact resistance at an interface between the at least one liner material and the copper conductive structure. A carbon-based cap may additionally or alternatively be deposited on a metal cap, over the copper conductive structure, to reduce surface scattering at an interface between the metal cap and an additional copper conductive structure deposited over the metal cap. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_TW202320273A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>TW202320273A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_TW202320273A3</originalsourceid><addsrcrecordid>eNrjZBAPTs3NTM7PSylNLskvUiguKQIySotSeRhY0xJzilN5oTQ3g6Kba4izh25qQX58anFBYnJqXmpJfEi4kYGRMRCbGzsaE6MGAAPIIow</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semiconductor structure</title><source>esp@cenet</source><creator>TSAI, MING-HSING ; CHANG, CHIH-YI ; CHIN, SHUNG ; CHI, CHIHIEN</creator><creatorcontrib>TSAI, MING-HSING ; CHANG, CHIH-YI ; CHIN, SHUNG ; CHI, CHIHIEN</creatorcontrib><description>A graphene liner deposited between at least one liner material (e.g., barrier layer, ruthenium liner, and/or cobalt liner) and a copper conductive structure reduces surface scattering at an interface between the at least one liner material and the copper conductive structure. Additionally, or alternatively, the carbon-based liner reduces contact resistance at an interface between the at least one liner material and the copper conductive structure. A carbon-based cap may additionally or alternatively be deposited on a metal cap, over the copper conductive structure, to reduce surface scattering at an interface between the metal cap and an additional copper conductive structure deposited over the metal cap.</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230516&DB=EPODOC&CC=TW&NR=202320273A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230516&DB=EPODOC&CC=TW&NR=202320273A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TSAI, MING-HSING</creatorcontrib><creatorcontrib>CHANG, CHIH-YI</creatorcontrib><creatorcontrib>CHIN, SHUNG</creatorcontrib><creatorcontrib>CHI, CHIHIEN</creatorcontrib><title>Semiconductor structure</title><description>A graphene liner deposited between at least one liner material (e.g., barrier layer, ruthenium liner, and/or cobalt liner) and a copper conductive structure reduces surface scattering at an interface between the at least one liner material and the copper conductive structure. Additionally, or alternatively, the carbon-based liner reduces contact resistance at an interface between the at least one liner material and the copper conductive structure. A carbon-based cap may additionally or alternatively be deposited on a metal cap, over the copper conductive structure, to reduce surface scattering at an interface between the metal cap and an additional copper conductive structure deposited over the metal cap.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBAPTs3NTM7PSylNLskvUiguKQIySotSeRhY0xJzilN5oTQ3g6Kba4izh25qQX58anFBYnJqXmpJfEi4kYGRMRCbGzsaE6MGAAPIIow</recordid><startdate>20230516</startdate><enddate>20230516</enddate><creator>TSAI, MING-HSING</creator><creator>CHANG, CHIH-YI</creator><creator>CHIN, SHUNG</creator><creator>CHI, CHIHIEN</creator><scope>EVB</scope></search><sort><creationdate>20230516</creationdate><title>Semiconductor structure</title><author>TSAI, MING-HSING ; CHANG, CHIH-YI ; CHIN, SHUNG ; CHI, CHIHIEN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TW202320273A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>TSAI, MING-HSING</creatorcontrib><creatorcontrib>CHANG, CHIH-YI</creatorcontrib><creatorcontrib>CHIN, SHUNG</creatorcontrib><creatorcontrib>CHI, CHIHIEN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TSAI, MING-HSING</au><au>CHANG, CHIH-YI</au><au>CHIN, SHUNG</au><au>CHI, CHIHIEN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor structure</title><date>2023-05-16</date><risdate>2023</risdate><abstract>A graphene liner deposited between at least one liner material (e.g., barrier layer, ruthenium liner, and/or cobalt liner) and a copper conductive structure reduces surface scattering at an interface between the at least one liner material and the copper conductive structure. Additionally, or alternatively, the carbon-based liner reduces contact resistance at an interface between the at least one liner material and the copper conductive structure. A carbon-based cap may additionally or alternatively be deposited on a metal cap, over the copper conductive structure, to reduce surface scattering at an interface between the metal cap and an additional copper conductive structure deposited over the metal cap.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | chi ; eng |
| recordid | cdi_epo_espacenet_TW202320273A |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Semiconductor structure |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-08T00%3A46%3A01IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=TSAI,%20MING-HSING&rft.date=2023-05-16&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ETW202320273A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |