Memory structure and manufacturing method thereof

A memory structure including a substrate, a stack structure, a first silicon oxide liner layer, and isolation structures is provided. The stack structure is disposed on the substrate. The stack structure includes a first dielectric layer and a floating gate. The first dielectric layer is located bet...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	LIN, WEIANG, CHEN, SHIH-HSI, FAN, SHENG-WEI, YANG, WENUNG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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