Semiconductor device
A semiconductor device according to an embodiment includes a semiconductor chip, a semiconductor element, a stacked body, and a structure body. The semiconductor chip includes a first surface, a second surface, and a side surface between the first surface and the second surface. The semiconductor el...
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| creator | MARUYAMA, SHINICHI TAKAHASHI, TSUTOMU KATO, YOSHIKO KONDO, NAOYUKI HARASHIMA, HIROMITSU TATSUMI, YUUICHI |
| description | A semiconductor device according to an embodiment includes a semiconductor chip, a semiconductor element, a stacked body, and a structure body. The semiconductor chip includes a first surface, a second surface, and a side surface between the first surface and the second surface. The semiconductor element is provided in the center of the semiconductor chip when viewed from the normal direction of the first surface. The stacked body is provided at the outer peripheral end portion of the semiconductor chip when viewed from the normal direction and includes a plurality of first layers and a plurality of second layers alternately stacked in the normal direction. The structure body is provided in at least a part between the semiconductor element and the side surface when viewed from the normal direction and extending from a position higher than the stacked body to a position lower than the stacked body. |
| format | Patent |
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The semiconductor chip includes a first surface, a second surface, and a side surface between the first surface and the second surface. The semiconductor element is provided in the center of the semiconductor chip when viewed from the normal direction of the first surface. The stacked body is provided at the outer peripheral end portion of the semiconductor chip when viewed from the normal direction and includes a plurality of first layers and a plurality of second layers alternately stacked in the normal direction. 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The semiconductor chip includes a first surface, a second surface, and a side surface between the first surface and the second surface. The semiconductor element is provided in the center of the semiconductor chip when viewed from the normal direction of the first surface. The stacked body is provided at the outer peripheral end portion of the semiconductor chip when viewed from the normal direction and includes a plurality of first layers and a plurality of second layers alternately stacked in the normal direction. The structure body is provided in at least a part between the semiconductor element and the side surface when viewed from the normal direction and extending from a position higher than the stacked body to a position lower than the stacked body.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBAJTs3NTM7PSylNLskvUkhJLctMTuVhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfEh4UYGRsaGRkZmRo7GxKgBAGGzIQY</recordid><startdate>20230316</startdate><enddate>20230316</enddate><creator>MARUYAMA, SHINICHI</creator><creator>TAKAHASHI, TSUTOMU</creator><creator>KATO, YOSHIKO</creator><creator>KONDO, NAOYUKI</creator><creator>HARASHIMA, HIROMITSU</creator><creator>TATSUMI, YUUICHI</creator><scope>EVB</scope></search><sort><creationdate>20230316</creationdate><title>Semiconductor device</title><author>MARUYAMA, SHINICHI ; TAKAHASHI, TSUTOMU ; KATO, YOSHIKO ; KONDO, NAOYUKI ; HARASHIMA, HIROMITSU ; TATSUMI, YUUICHI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TW202312262A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>MARUYAMA, SHINICHI</creatorcontrib><creatorcontrib>TAKAHASHI, TSUTOMU</creatorcontrib><creatorcontrib>KATO, YOSHIKO</creatorcontrib><creatorcontrib>KONDO, NAOYUKI</creatorcontrib><creatorcontrib>HARASHIMA, HIROMITSU</creatorcontrib><creatorcontrib>TATSUMI, YUUICHI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MARUYAMA, SHINICHI</au><au>TAKAHASHI, TSUTOMU</au><au>KATO, YOSHIKO</au><au>KONDO, NAOYUKI</au><au>HARASHIMA, HIROMITSU</au><au>TATSUMI, YUUICHI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor device</title><date>2023-03-16</date><risdate>2023</risdate><abstract>A semiconductor device according to an embodiment includes a semiconductor chip, a semiconductor element, a stacked body, and a structure body. The semiconductor chip includes a first surface, a second surface, and a side surface between the first surface and the second surface. The semiconductor element is provided in the center of the semiconductor chip when viewed from the normal direction of the first surface. The stacked body is provided at the outer peripheral end portion of the semiconductor chip when viewed from the normal direction and includes a plurality of first layers and a plurality of second layers alternately stacked in the normal direction. The structure body is provided in at least a part between the semiconductor element and the side surface when viewed from the normal direction and extending from a position higher than the stacked body to a position lower than the stacked body.</abstract><oa>free_for_read</oa></addata></record> |
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| language | chi ; eng |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Semiconductor device |
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