Ga2o3-based single crystal substrate and method for manufacturing ga2o3-based single crystal substrate

Ga2o3-based single crystal substrate and method for manufacturing ga2o3-based single crystal substrate

To enable the manufacture of a completely twin crystal-free Ga2O3-based single crystal and Ga2O3-based single crystal substrate, and consequently to enable the high-yield production of an optical device or an electric power device using a Ga2O3-based single crystal substrate. A completely twin cryst...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: KOTAKI, TOSHIRO, NISHIGUCHI, KENGO
Format: Patent
Sprache:chi ; eng
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:To enable the manufacture of a completely twin crystal-free Ga2O3-based single crystal and Ga2O3-based single crystal substrate, and consequently to enable the high-yield production of an optical device or an electric power device using a Ga2O3-based single crystal substrate. A completely twin crystal-free Ga2O3-based single crystal substrate that is manufactured from a completely twin crystal-free single crystal, said single crystal being grown using a gallium oxide starting material in which the impurity concentration is controlled so as to give a concentration of impurities contained in the single crystal of 0.02-0.15 mol% inclusive.