Impedance measurement for a haptic load

In some implementations, a measurement circuit may drive, using a first transistor, a first node of a haptic load. The measurement circuit may trigger a first comparator when a voltage driving the haptic load satisfies a first condition. The first comparator may have a first node connected, in paral...

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Hauptverfasser: RUTKOWSKI, JOSEPH DALE, SALAZAR, NATHANIEL JAY T, SHEN, LIANG-GUO, ZAZZERA, JOSHUA
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creator RUTKOWSKI, JOSEPH DALE
SALAZAR, NATHANIEL JAY T
SHEN, LIANG-GUO
ZAZZERA, JOSHUA
description In some implementations, a measurement circuit may drive, using a first transistor, a first node of a haptic load. The measurement circuit may trigger a first comparator when a voltage driving the haptic load satisfies a first condition. The first comparator may have a first node connected, in parallel, to a drain of a second transistor and may have a second node connected to the first node of the haptic load. Additionally, the second transistor may have a gate connected to a gate of the first transistor and may have the drain connected to a first reference current.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_TW202248668A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>TW202248668A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_TW202248668A3</originalsourceid><addsrcrecordid>eNrjZFD3zC1ITUnMS05VyE1NLC4tSs1NzStRSMsvUkhUyEgsKMlMVsjJT0zhYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxIeFGBkZGJhZmZhaOxsSoAQCKRifb</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Impedance measurement for a haptic load</title><source>esp@cenet</source><creator>RUTKOWSKI, JOSEPH DALE ; SALAZAR, NATHANIEL JAY T ; SHEN, LIANG-GUO ; ZAZZERA, JOSHUA</creator><creatorcontrib>RUTKOWSKI, JOSEPH DALE ; SALAZAR, NATHANIEL JAY T ; SHEN, LIANG-GUO ; ZAZZERA, JOSHUA</creatorcontrib><description>In some implementations, a measurement circuit may drive, using a first transistor, a first node of a haptic load. The measurement circuit may trigger a first comparator when a voltage driving the haptic load satisfies a first condition. The first comparator may have a first node connected, in parallel, to a drain of a second transistor and may have a second node connected to the first node of the haptic load. Additionally, the second transistor may have a gate connected to a gate of the first transistor and may have the drain connected to a first reference current.</description><language>chi ; eng</language><subject>ALARM SYSTEMS ; MEASURING ; MEASURING ELECTRIC VARIABLES ; MEASURING MAGNETIC VARIABLES ; ORDER TELEGRAPHS ; PHYSICS ; SIGNALLING ; SIGNALLING OR CALLING SYSTEMS ; TESTING</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20221216&amp;DB=EPODOC&amp;CC=TW&amp;NR=202248668A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20221216&amp;DB=EPODOC&amp;CC=TW&amp;NR=202248668A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>RUTKOWSKI, JOSEPH DALE</creatorcontrib><creatorcontrib>SALAZAR, NATHANIEL JAY T</creatorcontrib><creatorcontrib>SHEN, LIANG-GUO</creatorcontrib><creatorcontrib>ZAZZERA, JOSHUA</creatorcontrib><title>Impedance measurement for a haptic load</title><description>In some implementations, a measurement circuit may drive, using a first transistor, a first node of a haptic load. The measurement circuit may trigger a first comparator when a voltage driving the haptic load satisfies a first condition. The first comparator may have a first node connected, in parallel, to a drain of a second transistor and may have a second node connected to the first node of the haptic load. Additionally, the second transistor may have a gate connected to a gate of the first transistor and may have the drain connected to a first reference current.</description><subject>ALARM SYSTEMS</subject><subject>MEASURING</subject><subject>MEASURING ELECTRIC VARIABLES</subject><subject>MEASURING MAGNETIC VARIABLES</subject><subject>ORDER TELEGRAPHS</subject><subject>PHYSICS</subject><subject>SIGNALLING</subject><subject>SIGNALLING OR CALLING SYSTEMS</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFD3zC1ITUnMS05VyE1NLC4tSs1NzStRSMsvUkhUyEgsKMlMVsjJT0zhYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxIeFGBkZGJhZmZhaOxsSoAQCKRifb</recordid><startdate>20221216</startdate><enddate>20221216</enddate><creator>RUTKOWSKI, JOSEPH DALE</creator><creator>SALAZAR, NATHANIEL JAY T</creator><creator>SHEN, LIANG-GUO</creator><creator>ZAZZERA, JOSHUA</creator><scope>EVB</scope></search><sort><creationdate>20221216</creationdate><title>Impedance measurement for a haptic load</title><author>RUTKOWSKI, JOSEPH DALE ; SALAZAR, NATHANIEL JAY T ; SHEN, LIANG-GUO ; ZAZZERA, JOSHUA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TW202248668A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2022</creationdate><topic>ALARM SYSTEMS</topic><topic>MEASURING</topic><topic>MEASURING ELECTRIC VARIABLES</topic><topic>MEASURING MAGNETIC VARIABLES</topic><topic>ORDER TELEGRAPHS</topic><topic>PHYSICS</topic><topic>SIGNALLING</topic><topic>SIGNALLING OR CALLING SYSTEMS</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>RUTKOWSKI, JOSEPH DALE</creatorcontrib><creatorcontrib>SALAZAR, NATHANIEL JAY T</creatorcontrib><creatorcontrib>SHEN, LIANG-GUO</creatorcontrib><creatorcontrib>ZAZZERA, JOSHUA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>RUTKOWSKI, JOSEPH DALE</au><au>SALAZAR, NATHANIEL JAY T</au><au>SHEN, LIANG-GUO</au><au>ZAZZERA, JOSHUA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Impedance measurement for a haptic load</title><date>2022-12-16</date><risdate>2022</risdate><abstract>In some implementations, a measurement circuit may drive, using a first transistor, a first node of a haptic load. The measurement circuit may trigger a first comparator when a voltage driving the haptic load satisfies a first condition. The first comparator may have a first node connected, in parallel, to a drain of a second transistor and may have a second node connected to the first node of the haptic load. Additionally, the second transistor may have a gate connected to a gate of the first transistor and may have the drain connected to a first reference current.</abstract><oa>free_for_read</oa></addata></record>
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subjects ALARM SYSTEMS
MEASURING
MEASURING ELECTRIC VARIABLES
MEASURING MAGNETIC VARIABLES
ORDER TELEGRAPHS
PHYSICS
SIGNALLING
SIGNALLING OR CALLING SYSTEMS
TESTING
title Impedance measurement for a haptic load
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-20T00%3A30%3A35IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=RUTKOWSKI,%20JOSEPH%20DALE&rft.date=2022-12-16&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ETW202248668A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true