Methods and systems for accurate measurement of deep structures having distorted geometry

Methods and systems for estimating values of geometric parameters characterizing in-plane, distorted shapes of high aspect ratio semiconductor structures based on x-ray scatterometry measurements are presented herein. A parameterized geometric model captures the scattering signature of in-plane, non...

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Bibliographische Detailangaben

Hauptverfasser:	HENCH, JOHN J, DZIURA, THADDEUS GERARD
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASURING MEASURING ANGLES MEASURING AREAS MEASURING IRREGULARITIES OF SURFACES OR CONTOURS MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS PHYSICS SEMICONDUCTOR DEVICES TESTING
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