Semiconductor processing system, method for precleaning substrate, semiconductor processing anhydrous hydrogen fluoride delivery system, semiconductor processing water vapor delivery system, and method for forming passivating film
In some embodiments, a method for semiconductor processing preclean includes removing an oxide layer from a substrate using anhydrous hydrogen fluoride in combination with water vapor. A system for the preclean may be configured to separate the anhydrous hydrogen fluoride and the water vapor until t...
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| creator | KOSIREDDY, RAJEEV REDDY WANG, FEI SUN, XIAO-DA SHIN, WOO-JUNG JIN, QU JOTHEESWARAN, BUBESH BABU CHAUDHURY, ADITYA LIN, XING WALIMBE, ADITYA AZIMI, AMIN WEI, CHUANG FU, YENUN KULKARNI, PRAHLAD |
| description | In some embodiments, a method for semiconductor processing preclean includes removing an oxide layer from a substrate using anhydrous hydrogen fluoride in combination with water vapor. A system for the preclean may be configured to separate the anhydrous hydrogen fluoride and the water vapor until they are delivered to a common volume near the substrate. Corrosion within components of the system may be limited by purification of anhydrous hydrogen fluoride, passivation of components, changing component materials, and heating components. Passivation may be achieved by filling a gas delivery component with anhydrous hydrogen fluoride and allowing the anhydrous hydrogen fluoride to remain in the gas delivery component to form a passivation layer. Consistent water vapor delivery may be achieved in part by heating components using heaters. |
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A system for the preclean may be configured to separate the anhydrous hydrogen fluoride and the water vapor until they are delivered to a common volume near the substrate. Corrosion within components of the system may be limited by purification of anhydrous hydrogen fluoride, passivation of components, changing component materials, and heating components. Passivation may be achieved by filling a gas delivery component with anhydrous hydrogen fluoride and allowing the anhydrous hydrogen fluoride to remain in the gas delivery component to form a passivation layer. Consistent water vapor delivery may be achieved in part by heating components using heaters.</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; CLEANING ; CLEANING IN GENERAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; PERFORMING OPERATIONS ; PREVENTION OF FOULING IN GENERAL ; SEMICONDUCTOR DEVICES ; TRANSPORTING</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20221116&DB=EPODOC&CC=TW&NR=202243755A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20221116&DB=EPODOC&CC=TW&NR=202243755A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KOSIREDDY, RAJEEV REDDY</creatorcontrib><creatorcontrib>WANG, FEI</creatorcontrib><creatorcontrib>SUN, XIAO-DA</creatorcontrib><creatorcontrib>SHIN, WOO-JUNG</creatorcontrib><creatorcontrib>JIN, QU</creatorcontrib><creatorcontrib>JOTHEESWARAN, BUBESH BABU</creatorcontrib><creatorcontrib>CHAUDHURY, ADITYA</creatorcontrib><creatorcontrib>LIN, XING</creatorcontrib><creatorcontrib>WALIMBE, ADITYA</creatorcontrib><creatorcontrib>AZIMI, AMIN</creatorcontrib><creatorcontrib>WEI, CHUANG</creatorcontrib><creatorcontrib>FU, YENUN</creatorcontrib><creatorcontrib>KULKARNI, PRAHLAD</creatorcontrib><title>Semiconductor processing system, method for precleaning substrate, semiconductor processing anhydrous hydrogen fluoride delivery system, semiconductor processing water vapor delivery system, and method for forming passivating film</title><description>In some embodiments, a method for semiconductor processing preclean includes removing an oxide layer from a substrate using anhydrous hydrogen fluoride in combination with water vapor. A system for the preclean may be configured to separate the anhydrous hydrogen fluoride and the water vapor until they are delivered to a common volume near the substrate. Corrosion within components of the system may be limited by purification of anhydrous hydrogen fluoride, passivation of components, changing component materials, and heating components. Passivation may be achieved by filling a gas delivery component with anhydrous hydrogen fluoride and allowing the anhydrous hydrogen fluoride to remain in the gas delivery component to form a passivation layer. Consistent water vapor delivery may be achieved in part by heating components using heaters.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CLEANING</subject><subject>CLEANING IN GENERAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>PERFORMING OPERATIONS</subject><subject>PREVENTION OF FOULING IN GENERAL</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNTssKwkAM7MWDqP8Q7wrSWjyLKN4VPJa4m9aFfbHZVvrDfoe1iAhS8BAmzGRmMk4eJzJKOCtrEV0AH5wgZmUr4JYjmQUYijcnoexVEprQ9nJ95Rgw0gJ4KALtrZXB1Qw9VmSh1LULShJI0qqh0H56BlPuXUmABn1H_7jQyu8PuzEvj8fO22B87aXSZpqMStRMszdOkvlhf94dl-RdQexRkKVYnC_pKk3X2SbPt9k_N09VFnLl</recordid><startdate>20221116</startdate><enddate>20221116</enddate><creator>KOSIREDDY, RAJEEV REDDY</creator><creator>WANG, FEI</creator><creator>SUN, XIAO-DA</creator><creator>SHIN, WOO-JUNG</creator><creator>JIN, QU</creator><creator>JOTHEESWARAN, BUBESH BABU</creator><creator>CHAUDHURY, ADITYA</creator><creator>LIN, XING</creator><creator>WALIMBE, ADITYA</creator><creator>AZIMI, AMIN</creator><creator>WEI, CHUANG</creator><creator>FU, YENUN</creator><creator>KULKARNI, PRAHLAD</creator><scope>EVB</scope></search><sort><creationdate>20221116</creationdate><title>Semiconductor processing system, method for precleaning substrate, semiconductor processing anhydrous hydrogen fluoride delivery system, semiconductor processing water vapor delivery system, and method for forming passivating film</title><author>KOSIREDDY, RAJEEV REDDY ; WANG, FEI ; SUN, XIAO-DA ; SHIN, WOO-JUNG ; JIN, QU ; JOTHEESWARAN, BUBESH BABU ; CHAUDHURY, ADITYA ; LIN, XING ; WALIMBE, ADITYA ; AZIMI, AMIN ; WEI, CHUANG ; FU, YENUN ; KULKARNI, PRAHLAD</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TW202243755A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CLEANING</topic><topic>CLEANING IN GENERAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>PERFORMING OPERATIONS</topic><topic>PREVENTION OF FOULING IN GENERAL</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>KOSIREDDY, RAJEEV REDDY</creatorcontrib><creatorcontrib>WANG, FEI</creatorcontrib><creatorcontrib>SUN, XIAO-DA</creatorcontrib><creatorcontrib>SHIN, WOO-JUNG</creatorcontrib><creatorcontrib>JIN, QU</creatorcontrib><creatorcontrib>JOTHEESWARAN, BUBESH BABU</creatorcontrib><creatorcontrib>CHAUDHURY, ADITYA</creatorcontrib><creatorcontrib>LIN, XING</creatorcontrib><creatorcontrib>WALIMBE, ADITYA</creatorcontrib><creatorcontrib>AZIMI, AMIN</creatorcontrib><creatorcontrib>WEI, CHUANG</creatorcontrib><creatorcontrib>FU, YENUN</creatorcontrib><creatorcontrib>KULKARNI, PRAHLAD</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KOSIREDDY, RAJEEV REDDY</au><au>WANG, FEI</au><au>SUN, XIAO-DA</au><au>SHIN, WOO-JUNG</au><au>JIN, QU</au><au>JOTHEESWARAN, BUBESH BABU</au><au>CHAUDHURY, ADITYA</au><au>LIN, XING</au><au>WALIMBE, ADITYA</au><au>AZIMI, AMIN</au><au>WEI, CHUANG</au><au>FU, YENUN</au><au>KULKARNI, PRAHLAD</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor processing system, method for precleaning substrate, semiconductor processing anhydrous hydrogen fluoride delivery system, semiconductor processing water vapor delivery system, and method for forming passivating film</title><date>2022-11-16</date><risdate>2022</risdate><abstract>In some embodiments, a method for semiconductor processing preclean includes removing an oxide layer from a substrate using anhydrous hydrogen fluoride in combination with water vapor. A system for the preclean may be configured to separate the anhydrous hydrogen fluoride and the water vapor until they are delivered to a common volume near the substrate. Corrosion within components of the system may be limited by purification of anhydrous hydrogen fluoride, passivation of components, changing component materials, and heating components. Passivation may be achieved by filling a gas delivery component with anhydrous hydrogen fluoride and allowing the anhydrous hydrogen fluoride to remain in the gas delivery component to form a passivation layer. Consistent water vapor delivery may be achieved in part by heating components using heaters.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CLEANING CLEANING IN GENERAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PERFORMING OPERATIONS PREVENTION OF FOULING IN GENERAL SEMICONDUCTOR DEVICES TRANSPORTING |
| title | Semiconductor processing system, method for precleaning substrate, semiconductor processing anhydrous hydrogen fluoride delivery system, semiconductor processing water vapor delivery system, and method for forming passivating film |
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