Sputtering pretreatment method using laser to process the adhesive layer used in the sputtering process of the semiconductor material
The present invention relates to a sputtering pretreatment method that can prevent the generation of burrs, reduce the defect rate, improve product reliability, shorten the process time, and improve unit per hour (UPH) when separating the semiconductor material from the sputtering frame after the sp...
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| creator | JEONG, TAE-YOUNG JUNG, HYUN-GYUN |
| description | The present invention relates to a sputtering pretreatment method that can prevent the generation of burrs, reduce the defect rate, improve product reliability, shorten the process time, and improve unit per hour (UPH) when separating the semiconductor material from the sputtering frame after the sputtering process is performed on the semiconductor material. The method is characterized in that the adhesive layer used in the sputtering process of the semiconductor material is processed by laser to harden the adhesive layer. |
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The method is characterized in that the adhesive layer used in the sputtering process of the semiconductor material is processed by laser to harden the adhesive layer.</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; CLADDING OR PLATING BY SOLDERING OR WELDING ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; MACHINE TOOLS ; METAL-WORKING NOT OTHERWISE PROVIDED FOR ; METALLURGY ; PERFORMING OPERATIONS ; SEMICONDUCTOR DEVICES ; SOLDERING OR UNSOLDERING ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; TRANSPORTING ; WELDING ; WORKING BY LASER BEAM</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20221101&DB=EPODOC&CC=TW&NR=202242163A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,778,883,25553,76306</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20221101&DB=EPODOC&CC=TW&NR=202242163A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>JEONG, TAE-YOUNG</creatorcontrib><creatorcontrib>JUNG, HYUN-GYUN</creatorcontrib><title>Sputtering pretreatment method using laser to process the adhesive layer used in the sputtering process of the semiconductor material</title><description>The present invention relates to a sputtering pretreatment method that can prevent the generation of burrs, reduce the defect rate, improve product reliability, shorten the process time, and improve unit per hour (UPH) when separating the semiconductor material from the sputtering frame after the sputtering process is performed on the semiconductor material. The method is characterized in that the adhesive layer used in the sputtering process of the semiconductor material is processed by laser to harden the adhesive layer.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>CLADDING OR PLATING BY SOLDERING OR WELDING</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>MACHINE TOOLS</subject><subject>METAL-WORKING NOT OTHERWISE PROVIDED FOR</subject><subject>METALLURGY</subject><subject>PERFORMING OPERATIONS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SOLDERING OR UNSOLDERING</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>TRANSPORTING</subject><subject>WELDING</subject><subject>WORKING BY LASER BEAM</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNzD0KwkAQhuE0FqLeYTyAoBuxF1HsDViGJftpFrI_7MwKHsB7mxgLS6spnvebafG6xCyCZP2dYoIkaHHwQg7SBkOZB-k0I5GEPgkNmElakDYt2D7Q67PXzDBk_Yf49-m4CLdR4GwTvMmNhEROD5Xu5sXkpjvG4ntnxfJ0rA7nFWKowVE38JC6uqq1Ulu12ZX78p_mDZhoTGQ</recordid><startdate>20221101</startdate><enddate>20221101</enddate><creator>JEONG, TAE-YOUNG</creator><creator>JUNG, HYUN-GYUN</creator><scope>EVB</scope></search><sort><creationdate>20221101</creationdate><title>Sputtering pretreatment method using laser to process the adhesive layer used in the sputtering process of the semiconductor material</title><author>JEONG, TAE-YOUNG ; JUNG, HYUN-GYUN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TW202242163A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>CLADDING OR PLATING BY SOLDERING OR WELDING</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>MACHINE TOOLS</topic><topic>METAL-WORKING NOT OTHERWISE PROVIDED FOR</topic><topic>METALLURGY</topic><topic>PERFORMING OPERATIONS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SOLDERING OR UNSOLDERING</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>TRANSPORTING</topic><topic>WELDING</topic><topic>WORKING BY LASER BEAM</topic><toplevel>online_resources</toplevel><creatorcontrib>JEONG, TAE-YOUNG</creatorcontrib><creatorcontrib>JUNG, HYUN-GYUN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>JEONG, TAE-YOUNG</au><au>JUNG, HYUN-GYUN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Sputtering pretreatment method using laser to process the adhesive layer used in the sputtering process of the semiconductor material</title><date>2022-11-01</date><risdate>2022</risdate><abstract>The present invention relates to a sputtering pretreatment method that can prevent the generation of burrs, reduce the defect rate, improve product reliability, shorten the process time, and improve unit per hour (UPH) when separating the semiconductor material from the sputtering frame after the sputtering process is performed on the semiconductor material. The method is characterized in that the adhesive layer used in the sputtering process of the semiconductor material is processed by laser to harden the adhesive layer.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY CLADDING OR PLATING BY SOLDERING OR WELDING COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR METALLURGY PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SOLDERING OR UNSOLDERING SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING WELDING WORKING BY LASER BEAM |
| title | Sputtering pretreatment method using laser to process the adhesive layer used in the sputtering process of the semiconductor material |
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