Semiconductor device and method of manufacturing the same

A method of fabricating a device includes providing a fin extending from a substrate, where the fin includes an epitaxial layer stack having a plurality of semiconductor channel layers interposed by a plurality of dummy layers. In some embodiments, the method further includes removing a portion of t...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	LIN, DA-WEN, YEH, CHIHIEH, YEAP, CHOH-FEI, LEE, TSUNG-LIN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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