Method for producing semiconductor device, substrate processing apparatus, and program
This method for producing a semiconductor device comprises a step for forming a film, which contains a specific element, oxygen and nitrogen, on a substrate by performing a cycle a predetermined number of times, the cycle comprising: (a) a step for supplying a first starting material, which contains...
Gespeichert in:
| Hauptverfasser: | , , , |
|---|---|
| Format: | Patent |
| Sprache: | chi ; eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | AKAE, NAONORI SHIMIZU, TOMIYUKI OZAKI, TAKASHI NISHIDA, KEIGO |
| description | This method for producing a semiconductor device comprises a step for forming a film, which contains a specific element, oxygen and nitrogen, on a substrate by performing a cycle a predetermined number of times, the cycle comprising: (a) a step for supplying a first starting material, which contains the specific element, to the substrate; (b) a step for supplying a second starting material, which has a molecular structure that is different from the molecular structure of the first starting material, while containing the specific element and oxygen, to the substrate; (c) a step for supplying an oxidant to the substrate; and (d) a step for supplying a nitriding agent to the substrate. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_TW202235658A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>TW202235658A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_TW202235658A3</originalsourceid><addsrcrecordid>eNqNirEKwjAURbM4iPoPca8gKZWuIoqLW9GxPJPbGrBJyEv8fhvwA5wu95yzFPcb0ssbOfgoQ_Qma-tGyZis9m5-aeYGH6tRSc5PTpESSqnBXFIKgWaWuZLkTDFjpGktFgO9GZvfrsT2cu5O1x2C78GBNBxS3z3UXqm6OTTtsf6n-QJ3qzpj</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method for producing semiconductor device, substrate processing apparatus, and program</title><source>esp@cenet</source><creator>AKAE, NAONORI ; SHIMIZU, TOMIYUKI ; OZAKI, TAKASHI ; NISHIDA, KEIGO</creator><creatorcontrib>AKAE, NAONORI ; SHIMIZU, TOMIYUKI ; OZAKI, TAKASHI ; NISHIDA, KEIGO</creatorcontrib><description>This method for producing a semiconductor device comprises a step for forming a film, which contains a specific element, oxygen and nitrogen, on a substrate by performing a cycle a predetermined number of times, the cycle comprising: (a) a step for supplying a first starting material, which contains the specific element, to the substrate; (b) a step for supplying a second starting material, which has a molecular structure that is different from the molecular structure of the first starting material, while containing the specific element and oxygen, to the substrate; (c) a step for supplying an oxidant to the substrate; and (d) a step for supplying a nitriding agent to the substrate.</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220916&DB=EPODOC&CC=TW&NR=202235658A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76418</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220916&DB=EPODOC&CC=TW&NR=202235658A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>AKAE, NAONORI</creatorcontrib><creatorcontrib>SHIMIZU, TOMIYUKI</creatorcontrib><creatorcontrib>OZAKI, TAKASHI</creatorcontrib><creatorcontrib>NISHIDA, KEIGO</creatorcontrib><title>Method for producing semiconductor device, substrate processing apparatus, and program</title><description>This method for producing a semiconductor device comprises a step for forming a film, which contains a specific element, oxygen and nitrogen, on a substrate by performing a cycle a predetermined number of times, the cycle comprising: (a) a step for supplying a first starting material, which contains the specific element, to the substrate; (b) a step for supplying a second starting material, which has a molecular structure that is different from the molecular structure of the first starting material, while containing the specific element and oxygen, to the substrate; (c) a step for supplying an oxidant to the substrate; and (d) a step for supplying a nitriding agent to the substrate.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNirEKwjAURbM4iPoPca8gKZWuIoqLW9GxPJPbGrBJyEv8fhvwA5wu95yzFPcb0ssbOfgoQ_Qma-tGyZis9m5-aeYGH6tRSc5PTpESSqnBXFIKgWaWuZLkTDFjpGktFgO9GZvfrsT2cu5O1x2C78GBNBxS3z3UXqm6OTTtsf6n-QJ3qzpj</recordid><startdate>20220916</startdate><enddate>20220916</enddate><creator>AKAE, NAONORI</creator><creator>SHIMIZU, TOMIYUKI</creator><creator>OZAKI, TAKASHI</creator><creator>NISHIDA, KEIGO</creator><scope>EVB</scope></search><sort><creationdate>20220916</creationdate><title>Method for producing semiconductor device, substrate processing apparatus, and program</title><author>AKAE, NAONORI ; SHIMIZU, TOMIYUKI ; OZAKI, TAKASHI ; NISHIDA, KEIGO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TW202235658A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>AKAE, NAONORI</creatorcontrib><creatorcontrib>SHIMIZU, TOMIYUKI</creatorcontrib><creatorcontrib>OZAKI, TAKASHI</creatorcontrib><creatorcontrib>NISHIDA, KEIGO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>AKAE, NAONORI</au><au>SHIMIZU, TOMIYUKI</au><au>OZAKI, TAKASHI</au><au>NISHIDA, KEIGO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method for producing semiconductor device, substrate processing apparatus, and program</title><date>2022-09-16</date><risdate>2022</risdate><abstract>This method for producing a semiconductor device comprises a step for forming a film, which contains a specific element, oxygen and nitrogen, on a substrate by performing a cycle a predetermined number of times, the cycle comprising: (a) a step for supplying a first starting material, which contains the specific element, to the substrate; (b) a step for supplying a second starting material, which has a molecular structure that is different from the molecular structure of the first starting material, while containing the specific element and oxygen, to the substrate; (c) a step for supplying an oxidant to the substrate; and (d) a step for supplying a nitriding agent to the substrate.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | chi ; eng |
| recordid | cdi_epo_espacenet_TW202235658A |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | Method for producing semiconductor device, substrate processing apparatus, and program |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-08T07%3A54%3A28IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=AKAE,%20NAONORI&rft.date=2022-09-16&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ETW202235658A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |