Physical vapor deposition chamber, method for depositing film, and method for forming semiconductor structure

A physical vapor deposition chamber includes a chamber, a wafer support, a cover ring, and a shield. The wafer support is disposed on a bottom of the chamber. The cover ring surrounds the wafer support and is electrically insulated from the wafer support. The shield surrounds a chamber wall of the p...

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Hauptverfasser: LIN, MING-HSIEN, HOU, KUO-LUNG, CHANG, CHIENNG
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:A physical vapor deposition chamber includes a chamber, a wafer support, a cover ring, and a shield. The wafer support is disposed on a bottom of the chamber. The cover ring surrounds the wafer support and is electrically insulated from the wafer support. The shield surrounds a chamber wall of the physical vapor deposition chamber. The shield includes a first vertical portion, a second vertical portion, and a horizontal portion. The first vertical portion is substantially parallel to the chamber wall of the physical vapor deposition chamber, and the cover ring is disposed between the first vertical portion and the wafer support. The first vertical portion is separated from an outer side wall of the cover ring by about 2.3 mm to about 2.7 mm. The second vertical portion is disposed below the cover ring, and a top end of the second vertical portion is substantially in direct with contact with the cover ring. The horizontal portion is disposed below the cover ring and connects a first bottom end of the first ver