Stacked structure for CMOS image sensors

Some embodiments relate to an image sensor. The image sensor includes a semiconductor substrate including a pixel region and a peripheral region. A backside isolation structure extends into a backside of the semiconductor substrate and laterally surrounds the pixel region. The backside isolation str...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	HUNG, FENGI, CHEN, SHENGAU, YAUNG, DUN-NIAN, KAO, MIN-FENG, KUO, WENANG, LIU, JENNG, LI, SHENGAN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!