Light-emitting device and manufacturing method thereof
A light emitting device is disclosed. The light emitting device includes: a support substrate; a semiconductor stack located on the support substrate and including a first type semiconductor layer, a second type semiconductor layer, an active layer located between the first type semiconductor layer...
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| creator | WANG, CHIH-MING SIAO, CHEN-ZIH CHEN, PENG-REN LIN, WEN-HSIANG CHENG, YING-ZE JING, CHANG-HUEI PAN, YUNGUNG |
| description | A light emitting device is disclosed. The light emitting device includes: a support substrate; a semiconductor stack located on the support substrate and including a first type semiconductor layer, a second type semiconductor layer, an active layer located between the first type semiconductor layer and the second type semiconductor layer, and an undoped semiconductor layer located on the first type semiconductor layer; and a first electrode located on the undoped semiconductor layer and the first type semiconductor layer, wherein the first type semiconductor layer includes a first region and a second region, the undoped semiconductor layer is located on the first region, the second region is not covered by the undoped semiconductor layer, the undoped semiconductor layer includes a first rough structure, the first type semiconductor layer includes a second rough structure in the second region, and the first electrode contacts with the second rough structure. |
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The light emitting device includes: a support substrate; a semiconductor stack located on the support substrate and including a first type semiconductor layer, a second type semiconductor layer, an active layer located between the first type semiconductor layer and the second type semiconductor layer, and an undoped semiconductor layer located on the first type semiconductor layer; and a first electrode located on the undoped semiconductor layer and the first type semiconductor layer, wherein the first type semiconductor layer includes a first region and a second region, the undoped semiconductor layer is located on the first region, the second region is not covered by the undoped semiconductor layer, the undoped semiconductor layer includes a first rough structure, the first type semiconductor layer includes a second rough structure in the second region, and the first electrode contacts with the second rough structure.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Light-emitting device and manufacturing method thereof |
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