Method of measuring a parameter of a lithographic process, measurement target for determination of a parameter of a lthographic process, substrate, and non-transistory computer program

A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design includi...

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Hauptverfasser: SMILDE, HENDRIK JAN HIDDE, VAN DER SCHAAR, MAURITS, ADAM, OMER ABUBAKER OMER, DEN BOEF, ARIE JEFFREY, KUBIS, MICHAEL, VAN BUEL, HENRICUS WILHELMUS MARIA, LIU, XING-LAN, BHATTACHARYYA, KAUSTUVE, FOUQUET, CHRISTOPHE DAVID, FUCHS, ANDREAS, BELTMAN, JOHANNES MARCUS MARIA, VAN HAREN, RICHARD JOHANNES FRANCISCUS, JAK, MARTIN JACOBUS JOHAN
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creator SMILDE, HENDRIK JAN HIDDE
VAN DER SCHAAR, MAURITS
ADAM, OMER ABUBAKER OMER
DEN BOEF, ARIE JEFFREY
KUBIS, MICHAEL
VAN BUEL, HENRICUS WILHELMUS MARIA
LIU, XING-LAN
BHATTACHARYYA, KAUSTUVE
FOUQUET, CHRISTOPHE DAVID
FUCHS, ANDREAS
BELTMAN, JOHANNES MARCUS MARIA
VAN HAREN, RICHARD JOHANNES FRANCISCUS
JAK, MARTIN JACOBUS JOHAN
description A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer. A method of devising such a measurement target involving locatin
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subjects APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
MEASURING
MEASURING ANGLES
MEASURING AREAS
MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
TESTING
title Method of measuring a parameter of a lithographic process, measurement target for determination of a parameter of a lthographic process, substrate, and non-transistory computer program
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