Semiconductor devices and related methods
In one example, a semiconductor device can comprise a substrate, a device stack, first and second internal interconnects, and an encapsulant. The substrate can comprise a first and second substrate sides opposite each other, a substrate outer sidewall between the first substrate side and the second...
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| creator | LEE, JU-HYUNG KANG, SANG-GOO PARK, DONG-JOO KHIM, JIN-YOUNG PARK, KYUNG-ROK BANG, WON-BAE YU, SEUNG-JAE LEE, SEUL-BEE CHOI, MYUNG-JEA CHO, BYOUNG-WOO CHANG, MIN-HWA BOWERS, SHAUN KIM, JAE-YUN HONG, SE-HWAN LIM, GI-TAE HAN, GYU-WAN |
| description | In one example, a semiconductor device can comprise a substrate, a device stack, first and second internal interconnects, and an encapsulant. The substrate can comprise a first and second substrate sides opposite each other, a substrate outer sidewall between the first substrate side and the second substrate side, and a substrate inner sidewall defining a cavity between the first substrate side and the second substrate side. The device stack can be in the cavity and can comprise a first electronic device, and a second electronic device stacked on the first electronic device. The first internal interconnect can be coupled to the substrate and the device stack. The encapsulant can cover the substrate inner sidewall and the device stack and can fill the cavity. Other examples and related methods are disclosed herein. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_TW202211422A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>TW202211422A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_TW202211422A3</originalsourceid><addsrcrecordid>eNrjZNAMTs3NTM7PSylNLskvUkhJLctMTi1WSMxLUShKzUksSU1RyE0tychPKeZhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfEh4UYGRkaGhiZGRo7GxKgBABsvKO4</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semiconductor devices and related methods</title><source>esp@cenet</source><creator>LEE, JU-HYUNG ; KANG, SANG-GOO ; PARK, DONG-JOO ; KHIM, JIN-YOUNG ; PARK, KYUNG-ROK ; BANG, WON-BAE ; YU, SEUNG-JAE ; LEE, SEUL-BEE ; CHOI, MYUNG-JEA ; CHO, BYOUNG-WOO ; CHANG, MIN-HWA ; BOWERS, SHAUN ; KIM, JAE-YUN ; HONG, SE-HWAN ; LIM, GI-TAE ; HAN, GYU-WAN</creator><creatorcontrib>LEE, JU-HYUNG ; KANG, SANG-GOO ; PARK, DONG-JOO ; KHIM, JIN-YOUNG ; PARK, KYUNG-ROK ; BANG, WON-BAE ; YU, SEUNG-JAE ; LEE, SEUL-BEE ; CHOI, MYUNG-JEA ; CHO, BYOUNG-WOO ; CHANG, MIN-HWA ; BOWERS, SHAUN ; KIM, JAE-YUN ; HONG, SE-HWAN ; LIM, GI-TAE ; HAN, GYU-WAN</creatorcontrib><description>In one example, a semiconductor device can comprise a substrate, a device stack, first and second internal interconnects, and an encapsulant. The substrate can comprise a first and second substrate sides opposite each other, a substrate outer sidewall between the first substrate side and the second substrate side, and a substrate inner sidewall defining a cavity between the first substrate side and the second substrate side. The device stack can be in the cavity and can comprise a first electronic device, and a second electronic device stacked on the first electronic device. The first internal interconnect can be coupled to the substrate and the device stack. The encapsulant can cover the substrate inner sidewall and the device stack and can fill the cavity. Other examples and related methods are disclosed herein.</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220316&DB=EPODOC&CC=TW&NR=202211422A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220316&DB=EPODOC&CC=TW&NR=202211422A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LEE, JU-HYUNG</creatorcontrib><creatorcontrib>KANG, SANG-GOO</creatorcontrib><creatorcontrib>PARK, DONG-JOO</creatorcontrib><creatorcontrib>KHIM, JIN-YOUNG</creatorcontrib><creatorcontrib>PARK, KYUNG-ROK</creatorcontrib><creatorcontrib>BANG, WON-BAE</creatorcontrib><creatorcontrib>YU, SEUNG-JAE</creatorcontrib><creatorcontrib>LEE, SEUL-BEE</creatorcontrib><creatorcontrib>CHOI, MYUNG-JEA</creatorcontrib><creatorcontrib>CHO, BYOUNG-WOO</creatorcontrib><creatorcontrib>CHANG, MIN-HWA</creatorcontrib><creatorcontrib>BOWERS, SHAUN</creatorcontrib><creatorcontrib>KIM, JAE-YUN</creatorcontrib><creatorcontrib>HONG, SE-HWAN</creatorcontrib><creatorcontrib>LIM, GI-TAE</creatorcontrib><creatorcontrib>HAN, GYU-WAN</creatorcontrib><title>Semiconductor devices and related methods</title><description>In one example, a semiconductor device can comprise a substrate, a device stack, first and second internal interconnects, and an encapsulant. The substrate can comprise a first and second substrate sides opposite each other, a substrate outer sidewall between the first substrate side and the second substrate side, and a substrate inner sidewall defining a cavity between the first substrate side and the second substrate side. The device stack can be in the cavity and can comprise a first electronic device, and a second electronic device stacked on the first electronic device. The first internal interconnect can be coupled to the substrate and the device stack. The encapsulant can cover the substrate inner sidewall and the device stack and can fill the cavity. Other examples and related methods are disclosed herein.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNAMTs3NTM7PSylNLskvUkhJLctMTi1WSMxLUShKzUksSU1RyE0tychPKeZhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfEh4UYGRkaGhiZGRo7GxKgBABsvKO4</recordid><startdate>20220316</startdate><enddate>20220316</enddate><creator>LEE, JU-HYUNG</creator><creator>KANG, SANG-GOO</creator><creator>PARK, DONG-JOO</creator><creator>KHIM, JIN-YOUNG</creator><creator>PARK, KYUNG-ROK</creator><creator>BANG, WON-BAE</creator><creator>YU, SEUNG-JAE</creator><creator>LEE, SEUL-BEE</creator><creator>CHOI, MYUNG-JEA</creator><creator>CHO, BYOUNG-WOO</creator><creator>CHANG, MIN-HWA</creator><creator>BOWERS, SHAUN</creator><creator>KIM, JAE-YUN</creator><creator>HONG, SE-HWAN</creator><creator>LIM, GI-TAE</creator><creator>HAN, GYU-WAN</creator><scope>EVB</scope></search><sort><creationdate>20220316</creationdate><title>Semiconductor devices and related methods</title><author>LEE, JU-HYUNG ; KANG, SANG-GOO ; PARK, DONG-JOO ; KHIM, JIN-YOUNG ; PARK, KYUNG-ROK ; BANG, WON-BAE ; YU, SEUNG-JAE ; LEE, SEUL-BEE ; CHOI, MYUNG-JEA ; CHO, BYOUNG-WOO ; CHANG, MIN-HWA ; BOWERS, SHAUN ; KIM, JAE-YUN ; HONG, SE-HWAN ; LIM, GI-TAE ; HAN, GYU-WAN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TW202211422A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>LEE, JU-HYUNG</creatorcontrib><creatorcontrib>KANG, SANG-GOO</creatorcontrib><creatorcontrib>PARK, DONG-JOO</creatorcontrib><creatorcontrib>KHIM, JIN-YOUNG</creatorcontrib><creatorcontrib>PARK, KYUNG-ROK</creatorcontrib><creatorcontrib>BANG, WON-BAE</creatorcontrib><creatorcontrib>YU, SEUNG-JAE</creatorcontrib><creatorcontrib>LEE, SEUL-BEE</creatorcontrib><creatorcontrib>CHOI, MYUNG-JEA</creatorcontrib><creatorcontrib>CHO, BYOUNG-WOO</creatorcontrib><creatorcontrib>CHANG, MIN-HWA</creatorcontrib><creatorcontrib>BOWERS, SHAUN</creatorcontrib><creatorcontrib>KIM, JAE-YUN</creatorcontrib><creatorcontrib>HONG, SE-HWAN</creatorcontrib><creatorcontrib>LIM, GI-TAE</creatorcontrib><creatorcontrib>HAN, GYU-WAN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LEE, JU-HYUNG</au><au>KANG, SANG-GOO</au><au>PARK, DONG-JOO</au><au>KHIM, JIN-YOUNG</au><au>PARK, KYUNG-ROK</au><au>BANG, WON-BAE</au><au>YU, SEUNG-JAE</au><au>LEE, SEUL-BEE</au><au>CHOI, MYUNG-JEA</au><au>CHO, BYOUNG-WOO</au><au>CHANG, MIN-HWA</au><au>BOWERS, SHAUN</au><au>KIM, JAE-YUN</au><au>HONG, SE-HWAN</au><au>LIM, GI-TAE</au><au>HAN, GYU-WAN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor devices and related methods</title><date>2022-03-16</date><risdate>2022</risdate><abstract>In one example, a semiconductor device can comprise a substrate, a device stack, first and second internal interconnects, and an encapsulant. The substrate can comprise a first and second substrate sides opposite each other, a substrate outer sidewall between the first substrate side and the second substrate side, and a substrate inner sidewall defining a cavity between the first substrate side and the second substrate side. The device stack can be in the cavity and can comprise a first electronic device, and a second electronic device stacked on the first electronic device. The first internal interconnect can be coupled to the substrate and the device stack. The encapsulant can cover the substrate inner sidewall and the device stack and can fill the cavity. Other examples and related methods are disclosed herein.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Semiconductor devices and related methods |
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