Method and apparatus for atomic layer etching

A method for atomic layer etching may include a step of providing a substrate on which a material to be etched is formed, a modifying step of controlling the substrate at a first temperature and modifying a surface layer of the material to be removed by supplying a modifying gas to the substrate, an...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: PARK, SANG-JUN, CHO, BYUNGUL, KWON, JUN-HYUCK, AN, JONG-KI, JIN, KWANG-SEON, HAN, TIAN-HAO
Format: Patent
Sprache:chi ; eng
Schlagworte:
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