System and method to adjust a kinetics model of surface reactions during plasma processing

A system is disclosed, in accordance with one or more embodiments of the present disclosure. The system includes a metrology tool configured to acquire one or more measurements of a portion of a sample. The system includes a controller including one or more processors configured to execute program i...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	ZHANG, YI-TING, PU, HAI-FENG, LI, XIN, PANNEERCHELVAM, PREMKUMAR, HAN, FIDDLE SI-XIAO, HUARD, CHAD, CHEN, YEU-RUI, AGARWAL, ANKUR A
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CALCULATING COMPUTER SYSTEMS BASED ON SPECIFIC COMPUTATIONAL MODELS COMPUTING COUNTING ELECTRIC DIGITAL DATA PROCESSING ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY MEASURING MEASURING ANGLES MEASURING AREAS MEASURING IRREGULARITIES OF SURFACES OR CONTOURS MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS PHYSICS TESTING
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