Plasma processing device or plasma processing method
In order to provide a plasma processing device or a plasma processing method having improved processing yield, a plasma processing device that processes a film layer to be processed on a wafer disposed in a processing chamber in a vacuum container using a plasma formed in the processing chamber is p...
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| creator | ETO, SOICHIRO |
| description | In order to provide a plasma processing device or a plasma processing method having improved processing yield, a plasma processing device that processes a film layer to be processed on a wafer disposed in a processing chamber in a vacuum container using a plasma formed in the processing chamber is provided with: a detector for detecting the intensity of first light of a plurality of wavelengths in a first wavelength range that is obtained by receiving light emitted from a light source disposed outside the processing chamber into the processing chamber and reflected by an upper surface of the wafer during processing of the wafer, and second light of a plurality of wavelengths in a second wavelength range of the light transmitted from the light source without passing through the processing chamber; and a determination unit which determines a remaining film thickness of the film layer by comparing the intensity of the first light obtained during the processing and corrected using a rate of change in the intensit |
| format | Patent |
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and a determination unit which determines a remaining film thickness of the film layer by comparing the intensity of the first light obtained during the processing and corrected using a rate of change in the intensit</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220101&DB=EPODOC&CC=TW&NR=202201465A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220101&DB=EPODOC&CC=TW&NR=202201465A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ETO, SOICHIRO</creatorcontrib><title>Plasma processing device or plasma processing method</title><description>In order to provide a plasma processing device or a plasma processing method having improved processing yield, a plasma processing device that processes a film layer to be processed on a wafer disposed in a processing chamber in a vacuum container using a plasma formed in the processing chamber is provided with: a detector for detecting the intensity of first light of a plurality of wavelengths in a first wavelength range that is obtained by receiving light emitted from a light source disposed outside the processing chamber into the processing chamber and reflected by an upper surface of the wafer during processing of the wafer, and second light of a plurality of wavelengths in a second wavelength range of the light transmitted from the light source without passing through the processing chamber; 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| language | chi ; eng |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Plasma processing device or plasma processing method |
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