Method and apparatus for locally removing and/or modifying a polymer material on a surface

Method and apparatus for locally removing and/or modifying a polymer material on a surface

The invention relates to a process for locally removing and/or modifying a polymer material on a surface (WO) of a wafer (W), having the steps of: (a) aligning a mask (2) with respect to the surface (WO); (b) locally exposing the surface (WO) through the mask (2) by means of a VUV light source (3),...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: ZAMORA, RICARDO, WILL, BARBARA, KUHN, TIMO, BUTZ, JUERGEN
Format: Patent
Sprache:chi ; eng
Schlagworte:
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
MICROSTRUCTURAL TECHNOLOGY
ORIGINALS THEREFOR
PERFORMING OPERATIONS
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
SEMICONDUCTOR DEVICES
TRANSPORTING
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The invention relates to a process for locally removing and/or modifying a polymer material on a surface (WO) of a wafer (W), having the steps of: (a) aligning a mask (2) with respect to the surface (WO); (b) locally exposing the surface (WO) through the mask (2) by means of a VUV light source (3), with simultaneous supply of a gas mixture containing at least oxygen (O2); (c) purging the surface (WO) with a gas mixture containing at least nitrogen (N2) and oxygen (O2), wherein the VUV light source (3) is switched off; (d) repeating at least steps (b) and (c) until the removing and/or modifying of the polymer material is complete. The invention also relates to an apparatus for locally removing and/or modifying a polymer material (P) on a surface (WO) of a wafer (W), having a mask (2) alignable in a defined manner with respect to the surface (WO), wherein the surface (WO) is exposable by means of a VUV light source (3) disposed above the mask, wherein a gas mixture containing at least nitrogen (N2) and/or oxyge