Semiconductor device and method of fabricating the same

Disclosed are a semiconductor device and a method of fabricating the same. The semiconductor device includes an area-oriented region and a performance-oriented region, standard cells disposed on each of the area-oriented region and the performance-oriented region, and a routing metal layer on the st...

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Bibliographische Detailangaben
Hauptverfasser: LEE, BONG-HYUN, SEO, MUN-JUN, KIM, YONG-DEOK
Format: Patent
Sprache:chi ; eng
Schlagworte:
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Beschreibung
Zusammenfassung:Disclosed are a semiconductor device and a method of fabricating the same. The semiconductor device includes an area-oriented region and a performance-oriented region, standard cells disposed on each of the area-oriented region and the performance-oriented region, and a routing metal layer on the standard cells. The routing metal layer includes first routing lines on the area-oriented region and second routing lines on the performance-oriented region. The smallest line width of the first routing lines is a first width, the smallest line width of the second routing lines is a second width greater than the first width, a pitch between the first routing lines is a first pitch, and a pitch between the second routing lines is a second pitch greater than the first pitch.