Semiconductor device and forming method thereof
A semiconductor device and forming method thereof is provided. A stacked layer is formed on a substrate, wherein the stacked layer comprises first layers and second layers stacked alternatively. A trench is formed in the stacked layer, and the trench has a first sidewall and a second sidewall opposi...
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Patent |
| Sprache: | chi ; eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Schreiben Sie den ersten Kommentar!