Substrate processing method and substrate processing apparatus

A substrate that includes a first film of a silicon-containing film and a second film having a second aperture formed on the first film is subjected to processing that includes: preparing the substrate; controlling a temperature of the substrate to -30 DEG C or less; and etching the first film throu...

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Hauptverfasser:	HAMA, YASUTAKA, NORO, MOTOKI, KINO, SHU
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	HAMA, YASUTAKA NORO, MOTOKI KINO, SHU
description	A substrate that includes a first film of a silicon-containing film and a second film having a second aperture formed on the first film is subjected to processing that includes: preparing the substrate; controlling a temperature of the substrate to -30 DEG C or less; and etching the first film through the second aperture using a plasma formed from a first process gas containing a fluorocarbon gas. By etching the first film through the second aperture, a first aperture of a tapered shape is formed in the first film such that a width of the first aperture gradually decreases toward a bottom of the first aperture.
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fullrecord	<record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_TW202044336A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>TW202044336A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_TW202044336A3</originalsourceid><addsrcrecordid>eNrjZLALLk0qLilKLElVKCjKT04tLs7MS1fITS3JyE9RSMxLUSjGJp9YUJAIFCst5mFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8SHhRgZGBiYmxsZmjsbEqAEAzLExog</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Substrate processing method and substrate processing apparatus</title><source>esp@cenet</source><creator>HAMA, YASUTAKA ; NORO, MOTOKI ; KINO, SHU</creator><creatorcontrib>HAMA, YASUTAKA ; NORO, MOTOKI ; KINO, SHU</creatorcontrib><description>A substrate that includes a first film of a silicon-containing film and a second film having a second aperture formed on the first film is subjected to processing that includes: preparing the substrate; controlling a temperature of the substrate to -30 DEG C or less; and etching the first film through the second aperture using a plasma formed from a first process gas containing a fluorocarbon gas. By etching the first film through the second aperture, a first aperture of a tapered shape is formed in the first film such that a width of the first aperture gradually decreases toward a bottom of the first aperture.</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20201201&DB=EPODOC&CC=TW&NR=202044336A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20201201&DB=EPODOC&CC=TW&NR=202044336A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HAMA, YASUTAKA</creatorcontrib><creatorcontrib>NORO, MOTOKI</creatorcontrib><creatorcontrib>KINO, SHU</creatorcontrib><title>Substrate processing method and substrate processing apparatus</title><description>A substrate that includes a first film of a silicon-containing film and a second film having a second aperture formed on the first film is subjected to processing that includes: preparing the substrate; controlling a temperature of the substrate to -30 DEG C or less; and etching the first film through the second aperture using a plasma formed from a first process gas containing a fluorocarbon gas. By etching the first film through the second aperture, a first aperture of a tapered shape is formed in the first film such that a width of the first aperture gradually decreases toward a bottom of the first aperture.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLALLk0qLilKLElVKCjKT04tLs7MS1fITS3JyE9RSMxLUSjGJp9YUJAIFCst5mFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8SHhRgZGBiYmxsZmjsbEqAEAzLExog</recordid><startdate>20201201</startdate><enddate>20201201</enddate><creator>HAMA, YASUTAKA</creator><creator>NORO, MOTOKI</creator><creator>KINO, SHU</creator><scope>EVB</scope></search><sort><creationdate>20201201</creationdate><title>Substrate processing method and substrate processing apparatus</title><author>HAMA, YASUTAKA ; NORO, MOTOKI ; KINO, SHU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TW202044336A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2020</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>HAMA, YASUTAKA</creatorcontrib><creatorcontrib>NORO, MOTOKI</creatorcontrib><creatorcontrib>KINO, SHU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HAMA, YASUTAKA</au><au>NORO, MOTOKI</au><au>KINO, SHU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Substrate processing method and substrate processing apparatus</title><date>2020-12-01</date><risdate>2020</risdate><abstract>A substrate that includes a first film of a silicon-containing film and a second film having a second aperture formed on the first film is subjected to processing that includes: preparing the substrate; controlling a temperature of the substrate to -30 DEG C or less; and etching the first film through the second aperture using a plasma formed from a first process gas containing a fluorocarbon gas. By etching the first film through the second aperture, a first aperture of a tapered shape is formed in the first film such that a width of the first aperture gradually decreases toward a bottom of the first aperture.</abstract><oa>free_for_read</oa></addata></record>
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subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	Substrate processing method and substrate processing apparatus
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-27T04%3A12%3A25IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=HAMA,%20YASUTAKA&rft.date=2020-12-01&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ETW202044336A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true