Etching solution, and method of producing semiconductor element

A SiGe compound etching solution for selectively etching a compound represented by general formula Si1-xGex (provided that x is 0 or more and less than 1) relative to Si, Ge and an oxide thereof, the SiGe compound etching solution including periodic acid and fluoride.

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Bibliographische Detailangaben
Hauptverfasser: WADA, YUKIHISA, SUGAWARA, MAI, OHHASHI, TAKUYA
Format: Patent
Sprache:chi ; eng
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