Etching solution, and method of producing semiconductor element
A SiGe compound etching solution for selectively etching a compound represented by general formula Si1-xGex (provided that x is 0 or more and less than 1) relative to Si, Ge and an oxide thereof, the SiGe compound etching solution including periodic acid and fluoride.
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Format: | Patent |
Sprache: | chi ; eng |
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