Gas mixture including hydrogen fluoride, alcohol and an additive for preventing stiction of and/or repairing high aspect ratio structures

Gas mixture including hydrogen fluoride, alcohol and an additive for preventing stiction of and/or repairing high aspect ratio structures

A gas mixture for treating a substrate in a substrate processing system includes hydrogen fluoride gas, a vapor of an alcohol, an additive consisting of a base, and a carrier gas. The gas mixture can be used to treat high aspect ratio (HAR) structures arranged on a surface of a substrate. A surface...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: ZHU, JI, MELAET, GEROME MICHEL DOMINIQUE, LAVDOVSKY, NATHAN, MUI, DAVID, DYLEWICZ, RAFAL
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator ZHU, JI
MELAET, GEROME MICHEL DOMINIQUE
LAVDOVSKY, NATHAN
MUI, DAVID
DYLEWICZ, RAFAL
description A gas mixture for treating a substrate in a substrate processing system includes hydrogen fluoride gas, a vapor of an alcohol, an additive consisting of a base, and a carrier gas. The gas mixture can be used to treat high aspect ratio (HAR) structures arranged on a surface of a substrate. A surface of the substrate may be spin rinsed using a first rinsing liquid. The first rinsing liquid is spun off from the surface of the substrate. The gas mixture is directed onto the surface of the substrate after the first rinsing liquid is dispensed.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_TW202034377A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>TW202034377A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_TW202034377A3</originalsourceid><addsrcrecordid>eNqNjc0KwjAQhHvxIOo7rHfFYoWeRfx5gILHsiTbdiEmYZMUfQTf2lR8AA_DHOabmXnxvmKABz9jEgK2yiTNtofhpcX1ZKEzyQlr2gAa5QZnAK3OAtSaI48EnRPwQiPZODVDZBXZWXDdhO5yKuSR5TvL_QAYPKkIghnLuCQ1nYdlMevQBFr9fFGsL-fmdNuSdy0Fj4osxba578t9WR2quj5W_zAfZo9NSA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Gas mixture including hydrogen fluoride, alcohol and an additive for preventing stiction of and/or repairing high aspect ratio structures</title><source>esp@cenet</source><creator>ZHU, JI ; MELAET, GEROME MICHEL DOMINIQUE ; LAVDOVSKY, NATHAN ; MUI, DAVID ; DYLEWICZ, RAFAL</creator><creatorcontrib>ZHU, JI ; MELAET, GEROME MICHEL DOMINIQUE ; LAVDOVSKY, NATHAN ; MUI, DAVID ; DYLEWICZ, RAFAL</creatorcontrib><description>A gas mixture for treating a substrate in a substrate processing system includes hydrogen fluoride gas, a vapor of an alcohol, an additive consisting of a base, and a carrier gas. The gas mixture can be used to treat high aspect ratio (HAR) structures arranged on a surface of a substrate. A surface of the substrate may be spin rinsed using a first rinsing liquid. The first rinsing liquid is spun off from the surface of the substrate. The gas mixture is directed onto the surface of the substrate after the first rinsing liquid is dispensed.</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20200916&amp;DB=EPODOC&amp;CC=TW&amp;NR=202034377A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20200916&amp;DB=EPODOC&amp;CC=TW&amp;NR=202034377A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ZHU, JI</creatorcontrib><creatorcontrib>MELAET, GEROME MICHEL DOMINIQUE</creatorcontrib><creatorcontrib>LAVDOVSKY, NATHAN</creatorcontrib><creatorcontrib>MUI, DAVID</creatorcontrib><creatorcontrib>DYLEWICZ, RAFAL</creatorcontrib><title>Gas mixture including hydrogen fluoride, alcohol and an additive for preventing stiction of and/or repairing high aspect ratio structures</title><description>A gas mixture for treating a substrate in a substrate processing system includes hydrogen fluoride gas, a vapor of an alcohol, an additive consisting of a base, and a carrier gas. The gas mixture can be used to treat high aspect ratio (HAR) structures arranged on a surface of a substrate. A surface of the substrate may be spin rinsed using a first rinsing liquid. The first rinsing liquid is spun off from the surface of the substrate. The gas mixture is directed onto the surface of the substrate after the first rinsing liquid is dispensed.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjc0KwjAQhHvxIOo7rHfFYoWeRfx5gILHsiTbdiEmYZMUfQTf2lR8AA_DHOabmXnxvmKABz9jEgK2yiTNtofhpcX1ZKEzyQlr2gAa5QZnAK3OAtSaI48EnRPwQiPZODVDZBXZWXDdhO5yKuSR5TvL_QAYPKkIghnLuCQ1nYdlMevQBFr9fFGsL-fmdNuSdy0Fj4osxba578t9WR2quj5W_zAfZo9NSA</recordid><startdate>20200916</startdate><enddate>20200916</enddate><creator>ZHU, JI</creator><creator>MELAET, GEROME MICHEL DOMINIQUE</creator><creator>LAVDOVSKY, NATHAN</creator><creator>MUI, DAVID</creator><creator>DYLEWICZ, RAFAL</creator><scope>EVB</scope></search><sort><creationdate>20200916</creationdate><title>Gas mixture including hydrogen fluoride, alcohol and an additive for preventing stiction of and/or repairing high aspect ratio structures</title><author>ZHU, JI ; MELAET, GEROME MICHEL DOMINIQUE ; LAVDOVSKY, NATHAN ; MUI, DAVID ; DYLEWICZ, RAFAL</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TW202034377A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2020</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>ZHU, JI</creatorcontrib><creatorcontrib>MELAET, GEROME MICHEL DOMINIQUE</creatorcontrib><creatorcontrib>LAVDOVSKY, NATHAN</creatorcontrib><creatorcontrib>MUI, DAVID</creatorcontrib><creatorcontrib>DYLEWICZ, RAFAL</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ZHU, JI</au><au>MELAET, GEROME MICHEL DOMINIQUE</au><au>LAVDOVSKY, NATHAN</au><au>MUI, DAVID</au><au>DYLEWICZ, RAFAL</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Gas mixture including hydrogen fluoride, alcohol and an additive for preventing stiction of and/or repairing high aspect ratio structures</title><date>2020-09-16</date><risdate>2020</risdate><abstract>A gas mixture for treating a substrate in a substrate processing system includes hydrogen fluoride gas, a vapor of an alcohol, an additive consisting of a base, and a carrier gas. The gas mixture can be used to treat high aspect ratio (HAR) structures arranged on a surface of a substrate. A surface of the substrate may be spin rinsed using a first rinsing liquid. The first rinsing liquid is spun off from the surface of the substrate. The gas mixture is directed onto the surface of the substrate after the first rinsing liquid is dispensed.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language chi ; eng
recordid cdi_epo_espacenet_TW202034377A
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Gas mixture including hydrogen fluoride, alcohol and an additive for preventing stiction of and/or repairing high aspect ratio structures
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-12T20%3A16%3A12IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=ZHU,%20JI&rft.date=2020-09-16&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ETW202034377A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true