Self-aligned vertical integration of three-terminal memory devices

A three-dimensional (3D) memory structure includes memory cells and a plurality of oxide layers and a plurality of word line layers. The plurality of oxide layers and the plurality of word line layers are alternately stacked in a first direction. A plurality of double channel holes extend through th...

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Hauptverfasser:	GUNAWAN, GERENG, WU, HUI-JUNG, SHEN, MEIHUA, LILL, THORSTEN, PAN, YANG, HOANG, JOHN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	ELECTRICITY INFORMATION STORAGE PHYSICS STATIC STORES
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creator	GUNAWAN, GERENG WU, HUI-JUNG SHEN, MEIHUA LILL, THORSTEN PAN, YANG HOANG, JOHN
description	A three-dimensional (3D) memory structure includes memory cells and a plurality of oxide layers and a plurality of word line layers. The plurality of oxide layers and the plurality of word line layers are alternately stacked in a first direction. A plurality of double channel holes extend through the plurality of oxide layers and the plurality of word line layers in the first direction. The plurality of double channel holes have a peanut-shaped cross-section in a second direction that is transverse to the first direction.
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subjects	ELECTRICITY INFORMATION STORAGE PHYSICS STATIC STORES
title	Self-aligned vertical integration of three-terminal memory devices
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