Ferroelectric memories

A ferroelectric memory is provided. The ferroelectric memory includes a first electrode, a second electrode opposite to the first electrode, at least one ferroelectric layer disposed between the first electrode and the second electrode, and at least one antiferroelectric layer disposed between the f...

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Hauptverfasser:	YANG, HSIN-YUN, YEH, POUN, LIN, YU-DE, LEE, HENG-YUAN, WANG, CHIH-YAO
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	ELECTRICITY INFORMATION STORAGE PHYSICS STATIC STORES
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creator	YANG, HSIN-YUN YEH, POUN LIN, YU-DE LEE, HENG-YUAN WANG, CHIH-YAO
description	A ferroelectric memory is provided. The ferroelectric memory includes a first electrode, a second electrode opposite to the first electrode, at least one ferroelectric layer disposed between the first electrode and the second electrode, and at least one antiferroelectric layer disposed between the first electrode and the second electrode, wherein the antiferroelectric layer is in contact with the ferroelectric layer.
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title	Ferroelectric memories
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