Circuit and electronic device including an enhancement-mode transistor

An electronic device can include a channel layer and a barrier layer overlying the channel layer. In an embodiment, the electronic device can include a component disposed along a current path between a gate terminal and a gate electrode of a first transistor. In another embodiment, the electronic de...

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Bibliographische Detailangaben
Hauptverfasser: JEON, WOOUL, VENKATRAMAN, PRASAD
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:An electronic device can include a channel layer and a barrier layer overlying the channel layer. In an embodiment, the electronic device can include a component disposed along a current path between a gate terminal and a gate electrode of a first transistor. In another embodiment, the electronic device can include a second transistor wherein source and gate electrodes of the second transistor are coupled to the gate electrode of the first transistor, and a drain electrode of the second transistor is coupled to the gate terminal. A circuit can include a transistor and a diode. The transistor can include a drain, a gate, and a source, wherein the drain is coupled to a drain terminal, and the source is coupled to a source terminal. The diode can have an anode is coupled to the gate terminal, and a cathode is coupled to a gate of the transistor.