Extreme ultraviolet mask blank defect reduction
Extreme ultraviolet (EUV) mask blanks, methods for their manufacture, and production systems therefor are disclosed. The method for forming an EUV mask blank comprises placing a substrate in a multi-cathode physical vapor deposition chamber, the chamber comprising at least three targets, a first mol...
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| creator | LIU, SHU-WEI JINDAL, VIBHU ABHINAND, SAI FONG, HUI NI GRACE KE, CHANG |
| description | Extreme ultraviolet (EUV) mask blanks, methods for their manufacture, and production systems therefor are disclosed. The method for forming an EUV mask blank comprises placing a substrate in a multi-cathode physical vapor deposition chamber, the chamber comprising at least three targets, a first molybdenum target adjacent a first side of a silicon target and a second molybdenum target adjacent a second side of the silicon target. |
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| language | chi ; eng |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS |
| title | Extreme ultraviolet mask blank defect reduction |
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