Fabricating photonics structure light signal transmission regions

Fabricating photonics structure light signal transmission regions

There is set forth herein a method including depositing a layer formed of barrier material over a conductive material formation of a photonics structure; and removing material of the layer in a light signal transmitting region of the photonics structure. In one embodiment the barrier material can in...

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Hauptverfasser: LEAKE JR., GERALD, COOLBAUGH, DOUGLAS
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Sprache:chi ; eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
OPTICS
PHYSICS
SEMICONDUCTOR DEVICES
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creator LEAKE JR., GERALD
COOLBAUGH, DOUGLAS
description There is set forth herein a method including depositing a layer formed of barrier material over a conductive material formation of a photonics structure; and removing material of the layer in a light signal transmitting region of the photonics structure. In one embodiment the barrier material can include silicon carbon nitride. In one embodiment the barrier material can include silicon nitride.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_TW202004925A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>TW202004925A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_TW202004925A3</originalsourceid><addsrcrecordid>eNqNyjEOwjAMAMAsDKjwB_OASlGAgbFCVDygEmNlIpNaCk4Uu_-HgQcw3XJbN4z4bBzRWBLUpVgRjgpqbY22NoLMaTFQToIZrKHom1W5CDRKX3TnNi_MSvufnTuMt-l676mWmbRiJCGbp0fwwfvTJZyH4z_nA4i2MuU</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Fabricating photonics structure light signal transmission regions</title><source>esp@cenet</source><creator>LEAKE JR., GERALD ; COOLBAUGH, DOUGLAS</creator><creatorcontrib>LEAKE JR., GERALD ; COOLBAUGH, DOUGLAS</creatorcontrib><description>There is set forth herein a method including depositing a layer formed of barrier material over a conductive material formation of a photonics structure; and removing material of the layer in a light signal transmitting region of the photonics structure. In one embodiment the barrier material can include silicon carbon nitride. In one embodiment the barrier material can include silicon nitride.</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS ; OPTICS ; PHYSICS ; SEMICONDUCTOR DEVICES</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20200116&amp;DB=EPODOC&amp;CC=TW&amp;NR=202004925A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20200116&amp;DB=EPODOC&amp;CC=TW&amp;NR=202004925A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LEAKE JR., GERALD</creatorcontrib><creatorcontrib>COOLBAUGH, DOUGLAS</creatorcontrib><title>Fabricating photonics structure light signal transmission regions</title><description>There is set forth herein a method including depositing a layer formed of barrier material over a conductive material formation of a photonics structure; and removing material of the layer in a light signal transmitting region of the photonics structure. In one embodiment the barrier material can include silicon carbon nitride. In one embodiment the barrier material can include silicon nitride.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS</subject><subject>OPTICS</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyjEOwjAMAMAsDKjwB_OASlGAgbFCVDygEmNlIpNaCk4Uu_-HgQcw3XJbN4z4bBzRWBLUpVgRjgpqbY22NoLMaTFQToIZrKHom1W5CDRKX3TnNi_MSvufnTuMt-l676mWmbRiJCGbp0fwwfvTJZyH4z_nA4i2MuU</recordid><startdate>20200116</startdate><enddate>20200116</enddate><creator>LEAKE JR., GERALD</creator><creator>COOLBAUGH, DOUGLAS</creator><scope>EVB</scope></search><sort><creationdate>20200116</creationdate><title>Fabricating photonics structure light signal transmission regions</title><author>LEAKE JR., GERALD ; COOLBAUGH, DOUGLAS</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TW202004925A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2020</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS</topic><topic>OPTICS</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>LEAKE JR., GERALD</creatorcontrib><creatorcontrib>COOLBAUGH, DOUGLAS</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LEAKE JR., GERALD</au><au>COOLBAUGH, DOUGLAS</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Fabricating photonics structure light signal transmission regions</title><date>2020-01-16</date><risdate>2020</risdate><abstract>There is set forth herein a method including depositing a layer formed of barrier material over a conductive material formation of a photonics structure; and removing material of the layer in a light signal transmitting region of the photonics structure. In one embodiment the barrier material can include silicon carbon nitride. In one embodiment the barrier material can include silicon nitride.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
OPTICS
PHYSICS
SEMICONDUCTOR DEVICES
title Fabricating photonics structure light signal transmission regions
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-04T22%3A53%3A00IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=LEAKE%20JR.,%20GERALD&rft.date=2020-01-16&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ETW202004925A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true