Treatment and doping of barrier layers
Methods of treating a film on a substrate in a PVD chamber are described. The methods include biasing the substrate with an RF power to provide a biased substrate, etching the film on the biased substrate with at least one gas, and sputtering first and second sources of cobalt onto the film on the b...
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| creator | XIE, XIANG-JIN ALLEN, ADOLPH M TANG, XIANMIN YOSHIDOME, GOICHI LI, RUI |
| description | Methods of treating a film on a substrate in a PVD chamber are described. The methods include biasing the substrate with an RF power to provide a biased substrate, etching the film on the biased substrate with at least one gas, and sputtering first and second sources of cobalt onto the film on the biased substrate to form a doped film. Some embodiments advantageously provide doped films as liners or barrier layers. Some embodiments provide for the deposition of bulk materials on the doped films. Some embodiments advantageously minimize the thickness of the individual layers. |
| format | Patent |
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The methods include biasing the substrate with an RF power to provide a biased substrate, etching the film on the biased substrate with at least one gas, and sputtering first and second sources of cobalt onto the film on the biased substrate to form a doped film. Some embodiments advantageously provide doped films as liners or barrier layers. Some embodiments provide for the deposition of bulk materials on the doped films. Some embodiments advantageously minimize the thickness of the individual layers.</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200101&DB=EPODOC&CC=TW&NR=202000967A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200101&DB=EPODOC&CC=TW&NR=202000967A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>XIE, XIANG-JIN</creatorcontrib><creatorcontrib>ALLEN, ADOLPH M</creatorcontrib><creatorcontrib>TANG, XIANMIN</creatorcontrib><creatorcontrib>YOSHIDOME, GOICHI</creatorcontrib><creatorcontrib>LI, RUI</creatorcontrib><title>Treatment and doping of barrier layers</title><description>Methods of treating a film on a substrate in a PVD chamber are described. 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Some embodiments advantageously minimize the thickness of the individual layers.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFALKUpNLMlNzStRSMxLUUjJL8jMS1fIT1NISiwqykwtUshJrEwtKuZhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfEh4UYGRgYGBpZm5o7GxKgBAGKjJ4k</recordid><startdate>20200101</startdate><enddate>20200101</enddate><creator>XIE, XIANG-JIN</creator><creator>ALLEN, ADOLPH M</creator><creator>TANG, XIANMIN</creator><creator>YOSHIDOME, GOICHI</creator><creator>LI, RUI</creator><scope>EVB</scope></search><sort><creationdate>20200101</creationdate><title>Treatment and doping of barrier layers</title><author>XIE, XIANG-JIN ; ALLEN, ADOLPH M ; TANG, XIANMIN ; YOSHIDOME, GOICHI ; LI, RUI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TW202000967A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2020</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>XIE, XIANG-JIN</creatorcontrib><creatorcontrib>ALLEN, ADOLPH M</creatorcontrib><creatorcontrib>TANG, XIANMIN</creatorcontrib><creatorcontrib>YOSHIDOME, GOICHI</creatorcontrib><creatorcontrib>LI, RUI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>XIE, XIANG-JIN</au><au>ALLEN, ADOLPH M</au><au>TANG, XIANMIN</au><au>YOSHIDOME, GOICHI</au><au>LI, RUI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Treatment and doping of barrier layers</title><date>2020-01-01</date><risdate>2020</risdate><abstract>Methods of treating a film on a substrate in a PVD chamber are described. 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| language | chi ; eng |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | Treatment and doping of barrier layers |
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