Use of wafer brightness to monitor laser anneal process and laser anneal tool

A method is provided for monitoring the laser annealing of a semiconductor wafer. After annealing, images of many regions of the wafer are captured. The surface brightness of these regions is measured by computer, and statistics of these surface brightness measurements are determined, such as their...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: SUPPLIETH, FRANK
Format: Patent
Sprache:chi ; eng
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