Enhanced EUV photoresist materials, formulations and processes

The present disclosure relates to novel negative-type photoresist composition and methods of their use. The disclosure further relates to multiple trigger photoresist processes which allow for the improvement in contrast, resolution, and/or line edges roughness in some systems without giving up sens...

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Hauptverfasser: DAWSON, G, ROTH, JOHN, URE, DAVID, LADA, TOM, THEIS, W, GREG, O'CALLAGHAN, MCCLELLAND, ALEXANDRA, JACKSON, ED, FROMMHOLD, ANDREAS, ROBINSON, ALEX P. G, POPESCU, CARMEN
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creator DAWSON, G
ROTH, JOHN
URE, DAVID
LADA, TOM
THEIS, W
GREG, O'CALLAGHAN
MCCLELLAND, ALEXANDRA
JACKSON, ED
FROMMHOLD, ANDREAS
ROBINSON, ALEX P. G
POPESCU, CARMEN
description The present disclosure relates to novel negative-type photoresist composition and methods of their use. The disclosure further relates to multiple trigger photoresist processes which allow for the improvement in contrast, resolution, and/or line edges roughness in some systems without giving up sensitivity. The photoresist compositions and the methods of the current disclosure are ideal for fine patent processing using, for example, ultraviolet radiation, extreme ultraviolet radiation, beyond extreme ultraviolet radiation, X-rays and changed particle. The disclosure further relates to sensitivity enhancing materials useful in the disclosed compositions and methods.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_TW201936613A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>TW201936613A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_TW201936613A3</originalsourceid><addsrcrecordid>eNrjZLBzzctIzEtOTVFwDQ1TKMjIL8kvSi3OLC5RyE0sSS3KTMwp1lFIyy_KLc1JLMnMzytWSMxLUSgoyk9OLS5OLeZhYE0DKknlhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8SHhRgaGlsZmZobGjsbEqAEAbw4w_A</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Enhanced EUV photoresist materials, formulations and processes</title><source>esp@cenet</source><creator>DAWSON, G ; ROTH, JOHN ; URE, DAVID ; LADA, TOM ; THEIS, W ; GREG, O'CALLAGHAN ; MCCLELLAND, ALEXANDRA ; JACKSON, ED ; FROMMHOLD, ANDREAS ; ROBINSON, ALEX P. G ; POPESCU, CARMEN</creator><creatorcontrib>DAWSON, G ; ROTH, JOHN ; URE, DAVID ; LADA, TOM ; THEIS, W ; GREG, O'CALLAGHAN ; MCCLELLAND, ALEXANDRA ; JACKSON, ED ; FROMMHOLD, ANDREAS ; ROBINSON, ALEX P. G ; POPESCU, CARMEN</creatorcontrib><description>The present disclosure relates to novel negative-type photoresist composition and methods of their use. The disclosure further relates to multiple trigger photoresist processes which allow for the improvement in contrast, resolution, and/or line edges roughness in some systems without giving up sensitivity. The photoresist compositions and the methods of the current disclosure are ideal for fine patent processing using, for example, ultraviolet radiation, extreme ultraviolet radiation, beyond extreme ultraviolet radiation, X-rays and changed particle. The disclosure further relates to sensitivity enhancing materials useful in the disclosed compositions and methods.</description><language>chi ; eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; CINEMATOGRAPHY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; HETEROCYCLIC COMPOUNDS ; HOLOGRAPHY ; MATERIALS THEREFOR ; METALLURGY ; ORGANIC CHEMISTRY ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; SEMICONDUCTOR DEVICES</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20190916&amp;DB=EPODOC&amp;CC=TW&amp;NR=201936613A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20190916&amp;DB=EPODOC&amp;CC=TW&amp;NR=201936613A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>DAWSON, G</creatorcontrib><creatorcontrib>ROTH, JOHN</creatorcontrib><creatorcontrib>URE, DAVID</creatorcontrib><creatorcontrib>LADA, TOM</creatorcontrib><creatorcontrib>THEIS, W</creatorcontrib><creatorcontrib>GREG, O'CALLAGHAN</creatorcontrib><creatorcontrib>MCCLELLAND, ALEXANDRA</creatorcontrib><creatorcontrib>JACKSON, ED</creatorcontrib><creatorcontrib>FROMMHOLD, ANDREAS</creatorcontrib><creatorcontrib>ROBINSON, ALEX P. G</creatorcontrib><creatorcontrib>POPESCU, CARMEN</creatorcontrib><title>Enhanced EUV photoresist materials, formulations and processes</title><description>The present disclosure relates to novel negative-type photoresist composition and methods of their use. The disclosure further relates to multiple trigger photoresist processes which allow for the improvement in contrast, resolution, and/or line edges roughness in some systems without giving up sensitivity. The photoresist compositions and the methods of the current disclosure are ideal for fine patent processing using, for example, ultraviolet radiation, extreme ultraviolet radiation, beyond extreme ultraviolet radiation, X-rays and changed particle. The disclosure further relates to sensitivity enhancing materials useful in the disclosed compositions and methods.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>HETEROCYCLIC COMPOUNDS</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>METALLURGY</subject><subject>ORGANIC CHEMISTRY</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLBzzctIzEtOTVFwDQ1TKMjIL8kvSi3OLC5RyE0sSS3KTMwp1lFIyy_KLc1JLMnMzytWSMxLUSgoyk9OLS5OLeZhYE0DKknlhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8SHhRgaGlsZmZobGjsbEqAEAbw4w_A</recordid><startdate>20190916</startdate><enddate>20190916</enddate><creator>DAWSON, G</creator><creator>ROTH, JOHN</creator><creator>URE, DAVID</creator><creator>LADA, TOM</creator><creator>THEIS, W</creator><creator>GREG, O'CALLAGHAN</creator><creator>MCCLELLAND, ALEXANDRA</creator><creator>JACKSON, ED</creator><creator>FROMMHOLD, ANDREAS</creator><creator>ROBINSON, ALEX P. G</creator><creator>POPESCU, CARMEN</creator><scope>EVB</scope></search><sort><creationdate>20190916</creationdate><title>Enhanced EUV photoresist materials, formulations and processes</title><author>DAWSON, G ; ROTH, JOHN ; URE, DAVID ; LADA, TOM ; THEIS, W ; GREG, O'CALLAGHAN ; MCCLELLAND, ALEXANDRA ; JACKSON, ED ; FROMMHOLD, ANDREAS ; ROBINSON, ALEX P. G ; POPESCU, CARMEN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TW201936613A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2019</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>HETEROCYCLIC COMPOUNDS</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>METALLURGY</topic><topic>ORGANIC CHEMISTRY</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>DAWSON, G</creatorcontrib><creatorcontrib>ROTH, JOHN</creatorcontrib><creatorcontrib>URE, DAVID</creatorcontrib><creatorcontrib>LADA, TOM</creatorcontrib><creatorcontrib>THEIS, W</creatorcontrib><creatorcontrib>GREG, O'CALLAGHAN</creatorcontrib><creatorcontrib>MCCLELLAND, ALEXANDRA</creatorcontrib><creatorcontrib>JACKSON, ED</creatorcontrib><creatorcontrib>FROMMHOLD, ANDREAS</creatorcontrib><creatorcontrib>ROBINSON, ALEX P. G</creatorcontrib><creatorcontrib>POPESCU, CARMEN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>DAWSON, G</au><au>ROTH, JOHN</au><au>URE, DAVID</au><au>LADA, TOM</au><au>THEIS, W</au><au>GREG, O'CALLAGHAN</au><au>MCCLELLAND, ALEXANDRA</au><au>JACKSON, ED</au><au>FROMMHOLD, ANDREAS</au><au>ROBINSON, ALEX P. G</au><au>POPESCU, CARMEN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Enhanced EUV photoresist materials, formulations and processes</title><date>2019-09-16</date><risdate>2019</risdate><abstract>The present disclosure relates to novel negative-type photoresist composition and methods of their use. The disclosure further relates to multiple trigger photoresist processes which allow for the improvement in contrast, resolution, and/or line edges roughness in some systems without giving up sensitivity. The photoresist compositions and the methods of the current disclosure are ideal for fine patent processing using, for example, ultraviolet radiation, extreme ultraviolet radiation, beyond extreme ultraviolet radiation, X-rays and changed particle. The disclosure further relates to sensitivity enhancing materials useful in the disclosed compositions and methods.</abstract><oa>free_for_read</oa></addata></record>
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subjects APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HETEROCYCLIC COMPOUNDS
HOLOGRAPHY
MATERIALS THEREFOR
METALLURGY
ORGANIC CHEMISTRY
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
title Enhanced EUV photoresist materials, formulations and processes
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-20T19%3A30%3A07IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=DAWSON,%20G&rft.date=2019-09-16&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ETW201936613A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true