Deep ultraviolet led and production method for same

A deep ultraviolet LED that has a design wavelength of [lambda]. The deep ultraviolet LED is characterized by including, in order from the side opposite a sapphire substrate, a reflecting electrode layer (Au), a metal layer (Ni), a p-type GaN contact layer, a P-Block layer that comprises a p-type AlGaN layer and has a film thickness of 52-56 nm, an i-guide layer that comprises an AlN layer, a multi quantum well layer, an n-type AlGaN contact layer, a u-type AlGaN layer, an AlN template, and the sapphire substrate. The deep ultraviolet LED is also characterized by including a reflective two-dimensional photonic crystal periodic structure that includes a plurality of holes and is provided from the interface between the metal layer and the p-type GaN contact layer within the thickness-direction range of the p-type GaN contact layer but does not cross the interface between the p-type GaN contact layer and the P-Block layer. The deep ultraviolet LED is also characterized in that the distance from sapphire-substrat