Split-gate memory cell with field-enhanced source junctions, and method of forming such memory cell

A method is provided for forming a split-gate memory cell having field enhancement regions in the substrate for improved cell performance. The method may include forming a pair of gate structures over a substrate, performing a source implant between the pair of gate structures to form a self-aligned...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	DARYANANI, SONU, KABEER, SAJID, WALLS, JAMES
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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