Porous polyurethane polishing pad and preparation method thereof

Embodiments relate to a porous polyurethane polishing pad for use in a chemical mechanical planarization (CMP) process of semiconductors and a process for producing the same. In the porous polyurethane polishing pad, it is possible to control the size and distribution of pores, whereby the polishing...

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Bibliographische Detailangaben
Hauptverfasser:	RYOU, JOON-SUNG, KWON, YOUNG-PIL, HEO, HYE-YOUNG, HAN, HYUK-HEE, SEO, JANG-WON
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F,C08G BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOSITIONS BASED THEREON DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GENERAL PROCESSES OF COMPOUNDING GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS PERFORMING OPERATIONS POLISHING SEMICONDUCTOR DEVICES THEIR PREPARATION OR CHEMICAL WORKING-UP TRANSPORTING WORKING-UP
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Beschreibung
Zusammenfassung:	Embodiments relate to a porous polyurethane polishing pad for use in a chemical mechanical planarization (CMP) process of semiconductors and a process for producing the same. In the porous polyurethane polishing pad, it is possible to control the size and distribution of pores, whereby the polishing performance (i.e., polishing rate) of the polishing pad can be adjusted, by way of employing thermally expanded microcapsules as a solid phase foaming agent and an inert gas as a gas phase foaming agent.