Vertically stacked wafers and methods of forming same

The disclosure is directed to an integrated circuit stack and method of forming the same. In one embodiment, the integrated circuit stack may include: a plurality of vertically stacked wafers, each wafer including a back side and a front side, the back side of each wafer including a through-semicond...

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Bibliographische Detailangaben
1. Verfasser: ENGLAND, LUKE G
Format: Patent
Sprache:chi ; eng
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