Dielectric oxide, method for producing same, solid-state electronic device and method for producing said solid-state electronic device

One method for producing a dielectric oxide according to the present invention comprises: a precursor layer formation step wherein a layer of a first mixed precursor solution, which is obtained by mixing a first precursor solution that contains, as solutes, a precursor containing bismuth (Bi) and a...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: SHIMODA, TATSUYA, INOUE, SATOSHI, ARIGA, TOMOKI, IKEGAI, KAZUAKI
Format: Patent
Sprache:chi ; eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator SHIMODA, TATSUYA
INOUE, SATOSHI
ARIGA, TOMOKI
IKEGAI, KAZUAKI
description One method for producing a dielectric oxide according to the present invention comprises: a precursor layer formation step wherein a layer of a first mixed precursor solution, which is obtained by mixing a first precursor solution that contains, as solutes, a precursor containing bismuth (Bi) and a precursor containing niobium (Nb) with at least one additive selected from the group consisting of sorbitan fatty acid esters, polyoxyethylene ethers of sorbitan fatty acid esters, polyvinyl polymers and ethylene polymers, is formed by means of a coating method; and a dielectric oxide layer formation step wherein a layer (30x) of a first dielectric oxide which has a crystal phase having a pyrochlore crystal structure and contains a first oxide that is composed of bismuth (Bi) and niobium (Nb) (and which may contain unavoidable impurities) is formed by means of a heating treatment in which the layer of the first mixed precursor solution is heated in an oxygen-containing atmosphere.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_TW201841225A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>TW201841225A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_TW201841225A3</originalsourceid><addsrcrecordid>eNrjZGhzyUzNSU0uKcpMVsivyExJ1VHITS3JyE9RSMsvUigoyk8pTc7MS1coTswFShXn52Sm6BaXJJakKkC05ecBNaaklmUmpyok5qXg0pyZgl8vDwNrWmJOcSovlOZmUHRzDXH20E0tyI9PLS5ITE7NSy2JDwk3MjC0MDE0MjJ1NCZGDQAZBkue</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Dielectric oxide, method for producing same, solid-state electronic device and method for producing said solid-state electronic device</title><source>esp@cenet</source><creator>SHIMODA, TATSUYA ; INOUE, SATOSHI ; ARIGA, TOMOKI ; IKEGAI, KAZUAKI</creator><creatorcontrib>SHIMODA, TATSUYA ; INOUE, SATOSHI ; ARIGA, TOMOKI ; IKEGAI, KAZUAKI</creatorcontrib><description>One method for producing a dielectric oxide according to the present invention comprises: a precursor layer formation step wherein a layer of a first mixed precursor solution, which is obtained by mixing a first precursor solution that contains, as solutes, a precursor containing bismuth (Bi) and a precursor containing niobium (Nb) with at least one additive selected from the group consisting of sorbitan fatty acid esters, polyoxyethylene ethers of sorbitan fatty acid esters, polyvinyl polymers and ethylene polymers, is formed by means of a coating method; and a dielectric oxide layer formation step wherein a layer (30x) of a first dielectric oxide which has a crystal phase having a pyrochlore crystal structure and contains a first oxide that is composed of bismuth (Bi) and niobium (Nb) (and which may contain unavoidable impurities) is formed by means of a heating treatment in which the layer of the first mixed precursor solution is heated in an oxygen-containing atmosphere.</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20181116&amp;DB=EPODOC&amp;CC=TW&amp;NR=201841225A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20181116&amp;DB=EPODOC&amp;CC=TW&amp;NR=201841225A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SHIMODA, TATSUYA</creatorcontrib><creatorcontrib>INOUE, SATOSHI</creatorcontrib><creatorcontrib>ARIGA, TOMOKI</creatorcontrib><creatorcontrib>IKEGAI, KAZUAKI</creatorcontrib><title>Dielectric oxide, method for producing same, solid-state electronic device and method for producing said solid-state electronic device</title><description>One method for producing a dielectric oxide according to the present invention comprises: a precursor layer formation step wherein a layer of a first mixed precursor solution, which is obtained by mixing a first precursor solution that contains, as solutes, a precursor containing bismuth (Bi) and a precursor containing niobium (Nb) with at least one additive selected from the group consisting of sorbitan fatty acid esters, polyoxyethylene ethers of sorbitan fatty acid esters, polyvinyl polymers and ethylene polymers, is formed by means of a coating method; and a dielectric oxide layer formation step wherein a layer (30x) of a first dielectric oxide which has a crystal phase having a pyrochlore crystal structure and contains a first oxide that is composed of bismuth (Bi) and niobium (Nb) (and which may contain unavoidable impurities) is formed by means of a heating treatment in which the layer of the first mixed precursor solution is heated in an oxygen-containing atmosphere.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZGhzyUzNSU0uKcpMVsivyExJ1VHITS3JyE9RSMsvUigoyk8pTc7MS1coTswFShXn52Sm6BaXJJakKkC05ecBNaaklmUmpyok5qXg0pyZgl8vDwNrWmJOcSovlOZmUHRzDXH20E0tyI9PLS5ITE7NSy2JDwk3MjC0MDE0MjJ1NCZGDQAZBkue</recordid><startdate>20181116</startdate><enddate>20181116</enddate><creator>SHIMODA, TATSUYA</creator><creator>INOUE, SATOSHI</creator><creator>ARIGA, TOMOKI</creator><creator>IKEGAI, KAZUAKI</creator><scope>EVB</scope></search><sort><creationdate>20181116</creationdate><title>Dielectric oxide, method for producing same, solid-state electronic device and method for producing said solid-state electronic device</title><author>SHIMODA, TATSUYA ; INOUE, SATOSHI ; ARIGA, TOMOKI ; IKEGAI, KAZUAKI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TW201841225A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2018</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>SHIMODA, TATSUYA</creatorcontrib><creatorcontrib>INOUE, SATOSHI</creatorcontrib><creatorcontrib>ARIGA, TOMOKI</creatorcontrib><creatorcontrib>IKEGAI, KAZUAKI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SHIMODA, TATSUYA</au><au>INOUE, SATOSHI</au><au>ARIGA, TOMOKI</au><au>IKEGAI, KAZUAKI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Dielectric oxide, method for producing same, solid-state electronic device and method for producing said solid-state electronic device</title><date>2018-11-16</date><risdate>2018</risdate><abstract>One method for producing a dielectric oxide according to the present invention comprises: a precursor layer formation step wherein a layer of a first mixed precursor solution, which is obtained by mixing a first precursor solution that contains, as solutes, a precursor containing bismuth (Bi) and a precursor containing niobium (Nb) with at least one additive selected from the group consisting of sorbitan fatty acid esters, polyoxyethylene ethers of sorbitan fatty acid esters, polyvinyl polymers and ethylene polymers, is formed by means of a coating method; and a dielectric oxide layer formation step wherein a layer (30x) of a first dielectric oxide which has a crystal phase having a pyrochlore crystal structure and contains a first oxide that is composed of bismuth (Bi) and niobium (Nb) (and which may contain unavoidable impurities) is formed by means of a heating treatment in which the layer of the first mixed precursor solution is heated in an oxygen-containing atmosphere.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language chi ; eng
recordid cdi_epo_espacenet_TW201841225A
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Dielectric oxide, method for producing same, solid-state electronic device and method for producing said solid-state electronic device
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-04T10%3A05%3A20IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=SHIMODA,%20TATSUYA&rft.date=2018-11-16&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ETW201841225A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true