Pressure purge etch method for etching complex 3-D structures

A method for etching a substrate and removing byproducts includes (a) setting process parameters of a processing chamber for a selective dry etch process; (b) setting process pressure of the processing chamber to a first predetermined pressure in a range from 1 Torr to 10 Torr for the selective dry...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	PARK, PIL-YEON, GUHA, JOYDEEP
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!